Patent US3690965A successfully refreshed from Google Patents.
US3690965A
Expired / Lapsed
US
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Semiconductor epitaxial growth from solution
Assignee: AT&T Inc
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Filing: 1971-11-29
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Granted: 1972-09-12
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Expires: 1991-11-29
Abstract
Abstract CRYSTALLINE LAYERS OF GROUP III-V SEMICONDUCTOR MATERIALS ARE GROWN EPITAXIALLY FROM SOLUTION BY A METHOD WHICH INCLUDES THE ISOLATION OF SMALL EQUAL PORTIONS OF SOLUTION FROM A SOLUTION RESERVOIR. THE PORTIONS IN CONTACT WITH THE CRYSTAL SUBSTRATE ARE CONSTRAINED IN A DIRECTION PERPENDICULAR TO THE SUBSTRATE TO BE LESS THAN 3 MILLIMETERS THICK BEFORE CRYSTAL GROWTH IS INTIATED BY LOWERING THE TEMPERATURE OF THE SUBSTRATE AND ITS CONTACTING SOLUTION. AT THE TERMINATION OF GROWTH, THE DEPLETED SOLUTION IS REMOVED FROM THE GROWN LAYER LEAVING A SURFACE SUFFICIENTLY PERFECT TO ALLOW FURTHER PROCESSING WITHOUT AN INTERVENING GRINDING OR POLISHING OPERATION.
Inventors
- 👤 Arpad Albert Bergh
- 👤 Carl Ralph Paola
- 👤 Robert H Saul
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 14:39
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/26; H10P14/263; H10P14/265; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H10P14/3446
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-09-12 | 1976-03-13 | 1976-09-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-09-12 | 1980-03-13 | 1980-09-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-09-12 | 1984-03-13 | 1984-09-12 | $7700.00 | Window Closed / Lapsed |