Method of forming gallium phosphide coatings
Abstract
Abstract GALLIUM PHOSPHIDE (GAP) FILMS EVAPORTAED ONTO AMORPHOUS OR CRYSTALLINE SUBSTRATES HELD AT A PARTICULAR TEMPERATURE FROM THAT OF SEPARATE SOURCES OF GA AND P, EACH HELD AT A PARTICULAR TEMPERATURE EXHIBIT AN OPTICAL ABSORPTION EDGE SHIFT FROM A BULK POSITION OF 2.34 EV., DOWN TO ABOUT 0.8 EV. BY APPROPRIATE DEPOSITION OF GAP FILMS ONTO A SUBSTRATE AND/OR BY VACUUM-ANNEALING OF FILMS SO DEPOSITED, THE OPTICAL ABORPTION EDGE CAN BE SHIFTED TO ANY POSITION BETWEEN 0.8 EV. AND 2.34 EV. THUS, GAP FILMS MAY BE DEPOSITED AND THEN PROPERLY ANNEALED TO PROVIDE FILMS THAT COVER THE ENTIRE ABSORPTION SPECTRUM OF THE III-V COMPOUNDS (WITH THE EXCEPTION OF INAS AND INSB) PLUS GE AND SI. SUCH FILMS MAY BE USED AS OPTICAL FILTERS OF VARIABLE INDEX OF REFRACTION AND EXTINCTION COEFFICIENT TO COVER THE ENTIRE RANGE OF ENERGIES BETWEEN 0.8 AND 2.34 EV.
Inventors
- 👤 John E Davey
- 👤 Titus Pankey Jr
Bibliographic Details
Claims Analysis
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