Patent US3689983A successfully refreshed from Google Patents.
US3689983A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of bonding
Assignee: Motors Liquidation Co
•
Filing: 1970-05-11
•
Granted: 1972-09-12
•
Expires: 1990-05-11
Abstract
Abstract A bonding tip and method is disclosed for making an extremely strong tailless wire bond on a contact pad of a semiconductor device without significantly reducing the connected unbonded wire cross-section immediately adjacent the bond. One form of the tool includes an elongated member having a flat bonding surface on one end and a pair of oppositely disposed grooves which intersect opposite edges of said bonding surface. The connected unbonded wire adjacent a final bond of an interconnection is aligned with one of the grooves and separated from the bonded portion while the tip is in pressing engagement therewith by pulling thereby removing a preselected part of the bond under a groove producing a tailless bond.
Inventors
- 👤 Richard E Eltzroth
- 👤 Larry K Fewell
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 19:11
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/071; H10W72/075; H10W72/01; H10W72/015; H10W72/0711; H10W72/01565; H10W72/07141; H10W72/07521; H10W72/07531; H10W72/07532; H10W72/07533; H10W72/50; H10W72/531; H10W72/5363; H10W72/551; H10W72/552; H10W72/5522; H10W72/5524; H10W90/00; H10W90/701; H10W90/751; H10W90/754
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
264 words
A method of pressure bonding interconnections between contact pads of a semiconductor device without producing significant necking or leaving a wire tag end which comprises the steps of positioning a pressure bonding tip having a flat bonding surface and a pair of spaced apart first and second grooves extending inwardly toward one another from opposite sides of said tip over a free end portion of a filamentary wire generally aligning the free end portion with said first groove, feeding the free end portion to a position over a first contact pad of the semiconductor device, pressing the bonding surface and said first groove against the free end portion on said first contact pad forming a first flat wedge-type bond without appreciably extruding the wire under said first groove thereby preventing necking adjacent the first bond, moving said tip relative to said first contact pad to a position overlying a second contact pad on said semiconductor device while concurrently allowing the filamentary wire to pass freely under said first groove and said bonding surface, aligning a portion of said wire overlying the second contact pad with each of said grooves, pressing the bonding surface of said tip against the portion of the wire overlying the second contact pad forming a second flat wedge-type bond without appreciably extruding the wire underlying the grooves thereby preventing necking adjacent to the second bond, pulling said unconnected filamentary wire while said bonding surface remains in pressing engagement with said second bond to remove a preselected portion of said second bond underlying said first groove providing a tailless bond thereon.
Claim 2
Independent Claim
264 words
A method of pressure bonding interconnections between contact pads of a semiconductor device without producing significant necking or leaving a wire tag end which comprises the steps of positioning a pressure bonding tip having a flat bonding surface and a pair of spaced apart first and second grooves extending inwardly toward one another from opposite sides of said tip over a free end portion of a filamentary wire generally aligning the free end portion with said first groove, feeding the free end portion to a position over a first contact pad of the semiconductor device, pressing the bonding surface and said first groove against the free end portion on said first contact pad forming a first flat wedge-type bond without appreciably extruding the wire under said first groove thereby preventing necking adjacent the first bond, moving said tip relative to said first contact pad to a position overlying a second contact pad on said semiconductor device while concurrently allowing the filamentary wire to pass freely under said first groove and said bonding surface, aligning a portion of said wire overlying the second contact pad with each of said grooves, pressing the bonding surface of said tip against the portion of the wire overlying the second contact pad forming a second flat wedge-type bond without appreciably extruding the wire underlying the grooves thereby preventing necking adjacent to the second bond, pulling said unconnected filamentary wire while said bonding surface remains in pressing engagement with said second bond to remove a preselected portion of said second bond underlying said first groove providing a tailless bond thereon.
Claim 3
Independent Claim
321 words
A method of pressure bonding interconnections between contact pads of a semiconductor device without producing significant necking in the interconnection or leaving a wire tag end with a pressure bonding tip having a bonding step and a wire guide step, which method comprises the steps of positioning the pressure bonding step having a flat bonding surface and a pair of spaced apart first and second grooves extending inwardly toward one another from opposite sides of said step over a free end portion of a filamentary wire aligning the end portion under said first groove, feeding the free end portion of the wire through a channel in said guide step by said bonding step to a position over a first contact pad of a semiconductor device, pressing the bonding surface and said first groove of said tip against the free end portion on said first contact pad in order to form a first flat wedge-type bond of an interconnection without appreciably extruding the wire under said first groove thereby generally preventing necking adjacent the first bond, moving said tip relative to said first contact pad to a position overlying a second contact pad on said semiconductor device allowing the filamentary wire to pass freely through said channel and under said first groove and said bonding surface until a portion of the wire overlies said second contact pad, aligning said groove with the wire overlying the second contact pad, pressing the bonding surface and said grooves of said tip against the portion of the wire overlying the second contact pad in order to form a second flat wedge-type bond without appreciably extruding the wire underlying said grooves thereby preventing necking in the interconnection, pulling the adjacent connected filamentary wire coaxially along said channel while said bonding surface remains in pressing engagement with said second bond to remove a preselected portion of said seconD bond underlying said first groove providing a tailless bond thereon.
Claim 4
Independent Claim
321 words
A method of pressure bonding interconnections between contact pads of a semiconductor device without producing significant necking in the interconnection or leaving a wire tag end with a pressure bonding tip having a bonding step and a wire guide step, which method comprises the steps of positioning the pressure bonding step having a flat bonding surface and a pair of spaced apart first and second grooves extending inwardly toward one another from opposite sides of said step over a free end portion of a filamentary wire aligning the end portion under said first groove, feeding the free end portion of the wire through a channel in said guide step by said bonding step to a position over a first contact pad of a semiconductor device, pressing the bonding surface and said first groove of said tip against the free end portion on said first contact pad in order to form a first flat wedge-type bond of an interconnection without appreciably extruding the wire under said first groove thereby generally preventing necking adjacent the first bond, moving said tip relative to said first contact pad to a position overlying a second contact pad on said semiconductor device allowing the filamentary wire to pass freely through said channel and under said first groove and said bonding surface until a portion of the wire overlies said second contact pad, aligning said groove with the wire overlying the second contact pad, pressing the bonding surface and said grooves of said tip against the portion of the wire overlying the second contact pad in order to form a second flat wedge-type bond without appreciably extruding the wire underlying said grooves thereby preventing necking in the interconnection, pulling the adjacent connected filamentary wire coaxially along said channel while said bonding surface remains in pressing engagement with said second bond to remove a preselected portion of said seconD bond underlying said first groove providing a tailless bond thereon.
References Cited (Backward Citations)
US3347442A
Cited
US3461538A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-09-12 | 1976-03-13 | 1976-09-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-09-12 | 1980-03-13 | 1980-09-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-09-12 | 1984-03-13 | 1984-09-12 | $7700.00 | Window Closed / Lapsed |