Patent US3689392A successfully refreshed from Google Patents.
US3689392A
Expired / Lapsed
US
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Method of making a semiconductor device
Assignee: Optron Inc
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Filing: 1970-07-02
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Granted: 1972-09-05
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Expires: 1990-07-02
Abstract
Abstract A SEMICONDUCTOR DEVICE ADAPTED FOR HIGH TEMPERATURE PROCESSING AND THE METHOD FOR MAKING SAME. A SILICON WAFER OF A GIVEN CONDUCTIVITY IS PROVIDED, A LAYER OF THE OPPOSITE CONDUCTIVITY BEING DISPOSED THEREON FORMING A PN JUNCTION. METALLIZED LAYERS ARE DISPOSED ON THE TOP AND BOTTOM SURFACES OF THE WAFER, A GLASS SUBSTRATE BEING REMOVABLY SECURED TO EACH OF THE METALLIZED LAYERS. AFTER ETCHING, THE WAFER IS ADAPTED TO WITHSTAND THE HIGH TEMPERATURE PROCESSING RESULTING FROM GLASS ENCAPSULATION BY THE ALTERNATIVE DISPOSITION OF LAYERS OF SILICON DIOXIDE, SILICON NITRIDE AND SILICON DIOXIDE.
Inventors
- 👤 Jiri Sandera
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 16:55
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10P; H10P95/00; H10W74/10; H10W74/131
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-09-05 | 1976-03-06 | 1976-09-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-09-05 | 1980-03-06 | 1980-09-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-09-05 | 1984-03-06 | 1984-09-05 | $7700.00 | Window Closed / Lapsed |