Patent US3688166A successfully refreshed from Google Patents.
US3688166A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device for modulating electromagnetic radiation
Assignee: US Philips Corp
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Filing: 1969-11-21
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Granted: 1972-08-29
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Expires: 1989-11-21
Abstract
Abstract A multiple semiconductor modulator for electromagnetic radiation, particularly suitable as an attitude sensor in artificial satellites consisting of a preferably circular semiconductor plate which is divided into sectors by contacts provided on oppositely located major surfaces of the plate. Each sector which is provided with an injecting contact on the one major surface and with a non-injecting contact on the opposite major surface forms an independent modulator.
Inventors
- 👤 Francois Desvignes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 10:08
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/103; G; G02; G02F; G02F1/00; G02F1/01; G02F1/015; H10F99/00
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
110 words
A semiconductor device for modulating incident electromagnetic radiation, comprising a plate-shaped semiconductor body having opposed major surfaces and being divided into at least one pair of sectors situated opposite to each other, an injecting contact on one surface of each of the sectors, and a non-injecting contact on the other surface of each of the sectors, each sector together with the associated contacts forming an independent modulator transmissive to incident on a major surface of the body radiation, in combination with means to impinge the incident radiation on one major surface of the body and means to utilize the modulated radiation emanating from the other major surface of the body.
Claim 2
Dependent Claim
110 words
A semiconductor device for modulating incident electromagnetic radiation, comprising a plate-shaped semiconductor body having opposed major surfaces and being divided into at least one pair of sectors situated opposite to each other, an injecting contact on one surface of each of the sectors, and a non-injecting contact on the other surface of each of the sectors, each sector together with the associated contacts forming an independent modulator transmissive to incident on a major surface of the body radiation, in combination with means to impinge the incident radiation on one major surface of the body and means to utilize the modulated radiation emanating from the other major surface of the body.
Claim 3
Dependent Claim
24 words
A semiconductor device as claimed in claim 1, wherein all of the injecting contacts are situated on the same major surface of the body.
Claim 4
Dependent Claim
15 words
A semiconductor device as claimed in claim 1 wherein the body is of circular shape.
Claim 5
Dependent Claim
21 words
A semiconductor device as claimed in claim 1 wherein the body comPrises of eight sectors situated diametrically opposite to each other.
Claim 6
Dependent Claim
37 words
A semiconductor device as claimed in claim 1, wherein the plate-shaped semiconductor body comprises a circular zone which is free from injecting contacts, the center of said zone coinciding substantially with the center of the semiconductor plate.
Claim 7
Dependent Claim
34 words
A semiconductor device as claimed in claim 1 wherein at least one injecting contact is formed by a diffused zone having an conductive type opposite to that of the adjoining part of the body.
Claim 8
Dependent Claim
55 words
A semiconductor device as claimed in claim 5, wherein a major surface of the body comprises a diffused layer having a conductivity type opposite to that of the adjoining part of the body, said layer being divided into at least two parts by at least one electrically insulating zone, said parts forming individual injecting contacts.
Claim 9
Dependent Claim
34 words
A semiconductor device as claimed in claim 6, wherein the electrically insulating zones are formed by grooves provided in the said major surface and having a depth exceeding the thickness of the diffused layer.
Claim 10
Dependent Claim
19 words
In a semiconductor device as claimed in claim 1, wherein at least one injecting contact is an alloy contact.
Claim 11
Dependent Claim
20 words
A semiconductor device as claimed in claim 6, wherein each diffused zone is provided with a comb-shaped non-rectifying connection contact.
Claim 12
Dependent Claim
14 words
A semiconductor device as claimed in claim 1, wherein the non-injecting contacts are comb-shaped.
Claim 13
Dependent Claim
14 words
A semiconductor device as claimed in claim 7, wherein the alloy contacts are comb-shaped.
Claim 14
Dependent Claim
26 words
A semiconductor device as claimed in claim 11, wherein said body is a circular shaped and the digits of the comb-shaped contacts extend in radial directions.
Claim 15
Dependent Claim
55 words
A semiconductor device as claimed in claim 1, wherein the utilizing means converts the emanating radiation into an electric signal and means are present for applying an electric voltage between the injecting contact and the non-injecting contact of one of said modulators, as a result of which minority charge carriers are injected into the body.
Claim 16
Dependent Claim
27 words
A semiconductor device in combination as claimed in claim 1 further comprising means to apply a modulation signal to said contacts whereby said incident radiation is modulated.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-08-29 | 1976-02-28 | 1976-08-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-08-29 | 1980-02-28 | 1980-08-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-08-29 | 1984-02-28 | 1984-08-29 | $7700.00 | Window Closed / Lapsed |