Method for producing injection type light emitting semiconductor devices having an epitaxial layer of nitrogen-doped gallium phosphide
Abstract
Abstract INJECTION TYPE LIGHT EMITTING SEMICONDUCTOR DEVICES ARE PRODUCED BY GROWING AN EPITAXIAL LAYER OF GALLIUM PHOSPHIDE ON A SEMICONDUCTOR SUBSTRATE HAVING A ZINC BLENDE OR DIAMOND TYPE CRYSTALLINE STRUCTURE UTILIZING A VAPOR GROWTH PROCESS, SIMULTANEOUSLY CONTACTING AMMONIUM HALIDE GAS PRODUCED FROM A SOLID AMMONIUM HALIDE, SUCH AS NH4CL, NH4F, NH4BR OR NH4I, WITH THE GROWING LAYER OF GALLIUM PHOSPHIDE TO INTRODUCE NITROGEN INTO THE EPITAXIAL LAYER OF GALLIUM PHOSPHIDE, FORMING A P-N JUNCTION IN THE NITROGEN-DROPD EPITAXIAL LAYER OF GALLIUM PHOSPHIDE BY MEANS OF DIFFUSION, AND PROVIDING ELECTRODES ON THE P AND N REGIONS, RESPECTIVELY, UTILIZING AN ALLOYING AND A VACUUM EVAPORATING PROCESS.
Inventors
- 👤 Masahiko Ogirima
- 👤 Hazime Kusumoto
- 👤 Toshimitu Shinoda
Bibliographic Details
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