Method of manufacturing a semiconductor device consisting of a ternary compound of znsias on a gaas substrate
Abstract
Abstract A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE COMPRISING A SEMICONDUCTOR PORTION OF A COMPOUND OF THE TYPE AIIBIVC2V OR A MIXED CRYSTAL THEREOF. AII BEING ONE OF THE ELEMENTS BERYLLIUM, MAGNESIUM, ZINC, CADMIUM OR MERCURY OF THE SECOND GROUP, BIV BEING ONE OF THE ELEMENTS OF THE FOURTH GROUP INCLUDING SILICON, GERMANIUM, OR TIN, AND CV BEING ONE OF THE ELEMENTS OF THE FIFTH GROUP OF THE PERIODIC SYSTEM INCLUDING NITROGEN, PHOSPHORUS, ARSENIC OR ANTIMONY. A COMPOUND OF THIS TYPE IS EPITAXIALLY DEPOSITED ON A SUBSTRRATE CONSISTING OF A COMPOUND OF THE YPE AIIIBV OR MIXED CRYSTAL FROM A MELT CONTAINING THE COMPONENTS OF THE FIRST-MENTIONED COMPOUND OR MIXED CRYSTALS THEREOF.
Inventors
- 👤 Jean-Marc Le Duc
Bibliographic Details
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