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US3686542A Expired / Lapsed US ⏱️ 0.0 years remaining

Semiconductor transducer device

Assignee: National Aeronautics and Space Administration
•
Filing: 1970-11-23
•
Granted: 1972-08-22
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Expires: 1990-11-23
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Abstract

Abstract According to the invention, there is disclosed a miniature electromechanical junction transducer, the operation of which is based on piezojunction effect. The mechanical imput coupling member, in the subject invention, as distinguished from the prior art, is formed in situ and is spread over the top of the mesa structure to form an exact duplicate of the mesa surface at the area of contact.

Inventors

  • 👤 Wilhelm Rindner
  • 👤 Americo Iannini
  • 👤 Andre Garfein

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-28 07:51
CPC Classifications
H; H10; H10D; H10D48/00; H10D48/50

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 106 words
A stress sensitive device, comprising: a semiconductor having a mesa region and a junction; a stress coupling member; a portion of said stress coupling member being molded in situ in engagement with and bonded to said mesa region; first and second electrically conductive contact members; a conductive element electrically connecting said first contact member to said mesa region; the opposite end of said semiconductor being in electrical contact with said second contact member; a spacer member extending between said first and second contact members, said spacer member and said contact members forming a cavity; said semiconductor and said stress coupling member being disposed within said cavity.
Claim 2
Dependent Claim 106 words
A stress sensitive device, comprising: a semiconductor having a mesa region and a junction; a stress coupling member; a portion of said stress coupling member being molded in situ in engagement with and bonded to said mesa region; first and second electrically conductive contact members; a conductive element electrically connecting said first contact member to said mesa region; the opposite end of said semiconductor being in electrical contact with said second contact member; a spacer member extending between said first and second contact members, said spacer member and said contact members forming a cavity; said semiconductor and said stress coupling member being disposed within said cavity.
Claim 3
Dependent Claim 65 words
The invention as defined in claim 1 wherein said cavity is partially filled with an inert material, said inert material being in contact with a portion of said stress coupling member and said semiconductor to fix the position of said stress coupling member and said semiconductor, said inert material having a modulus of elasticity longer than that of said stress coupling member and said semiconductor.
Claim 4
Dependent Claim 25 words
The invention as defined in claim 1 wherein said stress coupling member comprises an apex portion, said apex portion being bonded to said mesa region.
Claim 5
Dependent Claim 18 words
The invention as defined in claim 1 wherein a seismic mass is affixed to said stress coupling member.
Claim 6
Dependent Claim 42 words
The invention as defined in claim 1 wherein said stress coupling member comprises a preformed electrically conductive mass portion, a thin electrically conductive coupling layer portion molded in situ as a coupling interface between said mesa region and said preformed mass portion.

References Cited (Backward Citations)

US2946935A Cited
US3107277A Cited
US3221277A Cited
US3308355A Cited
US3295085A Cited
FR1453546A Cited
US3518508A Cited
US3512054A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1975-08-22 1976-02-21 1976-08-22 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1979-08-22 1980-02-21 1980-08-22 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1983-08-22 1984-02-21 1984-08-22 $7700.00 Window Closed / Lapsed

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