US3512054A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductive transducer
Assignee: Toshiba Corp
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Filing: 1966-12-16
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Granted: 1970-05-12
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Expires: 1986-12-16
Abstract
No abstract record available.
Inventors
- 👤 Atsushi Owada
- 👤 Shinichi Shibata
- 👤 Hideo Mori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 10:24
CPC Classifications
H; H04; H04R; H04R23/00; H04R23/006; H10; H10D; H10D99/00; H10P; H10P50/00; H10P50/60; H10P50/64; H10P50/642; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/051; Y10S148/145
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
152 words
A SEMICONDUCTOR TRANSDUCER COMPRISING: A PLANAR TRANSISTOR INCLUDING A SEMICONDUCTOR WAFER HAVING A RAISED PORTION INTEGRAL WITH THE TOP FACE THEREOF, SAID RAISED PORTION HAVING A TOP SURFACE SUBSTANTIALLY PARALLEL TO THE TOP FACE OF SAID SEMICONDUCTOR WAFER, SAID TRANSISTOR HAVING A BASE REGION OF A FIRST CONDUCTIVITY TYPE, AN EMITTER REGION OF A SECOND CONDUCTIVITY TYPE, AND A COLLECTOR REGION OF SAID FIRST CONDUCTIVITY TYPE, ON WHICH ARE RESPECTIVELY MOUNTED A BASE ELECTRODE, AN EMITTER ELECTRODE AND A COLLECTOR ELECTRODE, AT LEAST A PORTION OF SAID BASE AND EMITTER REGIONS EXTENDING INTO SAID RAISED PORTION; AN OXIDE FILM MASKING AT LEAST A PORTION OF THE TOP FACE OF SAID SEMICONDUCTOR BODY, THE SURFACE OF SAID RAISED PORTION BEING UNMASKED; AND A STRESS APPLICATOR MOUNTED ON SAID RAISED PORTION OF SAID TRANSISTOR, THE CONTACT AREA OF SAID STRESS APPLICATOR BEING LARGER THAN THE AREA OF SAID UPPER SURFACE OF SAID RAISED PORTION.
Claim 2
Dependent Claim
152 words
A SEMICONDUCTOR TRANSDUCER COMPRISING: A PLANAR TRANSISTOR INCLUDING A SEMICONDUCTOR WAFER HAVING A RAISED PORTION INTEGRAL WITH THE TOP FACE THEREOF, SAID RAISED PORTION HAVING A TOP SURFACE SUBSTANTIALLY PARALLEL TO THE TOP FACE OF SAID SEMICONDUCTOR WAFER, SAID TRANSISTOR HAVING A BASE REGION OF A FIRST CONDUCTIVITY TYPE, AN EMITTER REGION OF A SECOND CONDUCTIVITY TYPE, AND A COLLECTOR REGION OF SAID FIRST CONDUCTIVITY TYPE, ON WHICH ARE RESPECTIVELY MOUNTED A BASE ELECTRODE, AN EMITTER ELECTRODE AND A COLLECTOR ELECTRODE, AT LEAST A PORTION OF SAID BASE AND EMITTER REGIONS EXTENDING INTO SAID RAISED PORTION; AN OXIDE FILM MASKING AT LEAST A PORTION OF THE TOP FACE OF SAID SEMICONDUCTOR BODY, THE SURFACE OF SAID RAISED PORTION BEING UNMASKED; AND A STRESS APPLICATOR MOUNTED ON SAID RAISED PORTION OF SAID TRANSISTOR, THE CONTACT AREA OF SAID STRESS APPLICATOR BEING LARGER THAN THE AREA OF SAID UPPER SURFACE OF SAID RAISED PORTION.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1973-05-11 | 1973-11-10 | 1974-05-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1977-05-11 | 1977-11-10 | 1978-05-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1981-05-11 | 1981-11-10 | 1982-05-12 | $7700.00 | Window Closed / Lapsed |