Patent US3683491A successfully refreshed from Google Patents.
US3683491A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for fabricating pinched resistor semiconductor structure
Assignee: Individual
•
Filing: 1970-11-12
•
Granted: 1972-08-15
•
Expires: 1990-11-12
Abstract
Abstract Method for fabricating a pinched resistor semiconductor structure having a channel and a field plate to provide a depletion region which pinches off the channel so that the current flow remains constant for any voltage after a predetermined voltage is reached.
Inventors
- 👤 Carroll E Nelson
- 👤 Hans R Camenzind
- 👤 Albert P Youmans
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 05:50
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/43; H10D30/00; H10D30/80; H10D30/83; H10D99/00; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/019; H10W10/10
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
220 words
In a method for forming a pinched resistor structure in a semiconductor body of one semiconductive type, forming an isolation moat in one surface of the semiconductor body which extends to a predetermined depth in the semi-conductor body, said isolation moat defining an area in the semiconductor body, forming a recess in the semiconductor body within said area adjacent one side of said area, said recess having a depth which is substantially less than the depth of the moat, forming a layer of insulating material in the moat and in the recess, forming a support structure upon the layer of insulating material, removing a portion of the semiconductor body until the layer of insulating material in the moat is exposed to provide an isolated island in which one portion has a lesser depth than the other portion, forming a region of a conductivity type opposite that of the island within the island and having at least a portion of the region being disposed within said portion of lesser depth, forming contact means making contact with the portion of lesser depth and the remaining portion, forming a metal field plate which overlies said region of opposite conductivity and extending beyond said region of opposite conductivity and connecting the same to the contact means making contact with said portion of lesser depth.
Claim 2
Dependent Claim
220 words
In a method for forming a pinched resistor structure in a semiconductor body of one semiconductive type, forming an isolation moat in one surface of the semiconductor body which extends to a predetermined depth in the semi-conductor body, said isolation moat defining an area in the semiconductor body, forming a recess in the semiconductor body within said area adjacent one side of said area, said recess having a depth which is substantially less than the depth of the moat, forming a layer of insulating material in the moat and in the recess, forming a support structure upon the layer of insulating material, removing a portion of the semiconductor body until the layer of insulating material in the moat is exposed to provide an isolated island in which one portion has a lesser depth than the other portion, forming a region of a conductivity type opposite that of the island within the island and having at least a portion of the region being disposed within said portion of lesser depth, forming contact means making contact with the portion of lesser depth and the remaining portion, forming a metal field plate which overlies said region of opposite conductivity and extending beyond said region of opposite conductivity and connecting the same to the contact means making contact with said portion of lesser depth.
Claim 3
Dependent Claim
34 words
A method as in claim 1 wherein said region of opposite conductivity is disposed in said portion of lesser depth to define a relatively shallow channel disposed between said first and second contact means.
Claim 4
Dependent Claim
52 words
A method as in claim 1 together with the step of applying a voltage to the contact means to create a depletion layer which extends through the channel to pinch off further current flow so that there is a substantially constant current flow regardless of the voltage applied to the contact means.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-08-15 | 1976-02-14 | 1976-08-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-08-15 | 1980-02-14 | 1980-08-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-08-15 | 1984-02-14 | 1984-08-15 | $7700.00 | Window Closed / Lapsed |