Patent US3681765A successfully refreshed from Google Patents.
US3681765A
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Ferroelectric/photoconductor memory element
Assignee: International Business Machines Corp
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Filing: 1971-03-01
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Granted: 1972-08-01
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Expires: 1991-03-01
Abstract
Abstract A memory element for use in photoelectric data recording apparatus of the type described in U.S. Pat. No. 3,148,354, comprising a sandwich-like structure of a top conductive electrode in electrical contact with a photoconductive material in electrical contact with a discontinuous interface layer in electrical contact with a ferroelectric material, in electrical contact with a conductive electrode substrate. The top conductive electrode and discontinuous interface layer are chosen to be blocking contact with the photoconductor in the dark, and injecting in the light. Further, one of the electrodes comprises a plurality of individual electrodes of stripe configuration while the other electrode comprises a bus bar portion and at least one reference or ''''ground'''' portion. The bus bar portion is in light controlled electrical contact with at least one localized part of the stripe configured electrodes via the photoconductor material. Where the top electrode comprises the bus bar and reference or ground portion and the discontinuous interface layer is a series of electrically conductive islands and the bottom electrode is in a striped electrode configuration, then by proper arrangement of islands and stripes, a focusing effect is achieved to allow switching of the ferroelectric material with a lower current density in the photoconductor.
Inventors
- 👤 Daniel W Chapman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 19:27
CPC Classifications
G; G11; G11C; G11C13/00; G11C13/04; G11C13/047
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
105 words
A memory element for use in photoelectric data recording apparatus comprising a sandwich structure of a top conductive electrode in electrical contact with a photoconductive material in electrical contact with a discontinuous metal interface layer in electrical contact with a ferroelectric material in electrical contact with a conductive electrode substrate, one of said electrodes comprising a plurality of individual electrodes of stripe configuration and the other of said electrodes comprising a bus bar portion and at least one reference portion, with said bus bar portion in light controlled electrical contact with at least one localized part of said stripe configured electrodes via said photoconductor material.
Claim 2
Dependent Claim
105 words
A memory element for use in photoelectric data recording apparatus comprising a sandwich structure of a top conductive electrode in electrical contact with a photoconductive material in electrical contact with a discontinuous metal interface layer in electrical contact with a ferroelectric material in electrical contact with a conductive electrode substrate, one of said electrodes comprising a plurality of individual electrodes of stripe configuration and the other of said electrodes comprising a bus bar portion and at least one reference portion, with said bus bar portion in light controlled electrical contact with at least one localized part of said stripe configured electrodes via said photoconductor material.
Claim 3
Dependent Claim
96 words
A memory element for use in photoelectric data recording apparatus comprising a sandwich structure of a top conductive electrode in electrical contact with a photoconduCtive material in electrical contact with a ferroelectric material in electrical contact with a conductive electrode substrate, one of said electrodes comprising a plurality of individual electrodes of stripe configuration and the other of said electrodes comprising a bus bar portion and at least one reference portion, with said bus bar portion in light controlled electrical contact with at least one localized part of said stripe configured electrodes via said photoconductor material.
Claim 4
Dependent Claim
96 words
A memory element for use in photoelectric data recording apparatus comprising a sandwich structure of a top conductive electrode in electrical contact with a photoconduCtive material in electrical contact with a ferroelectric material in electrical contact with a conductive electrode substrate, one of said electrodes comprising a plurality of individual electrodes of stripe configuration and the other of said electrodes comprising a bus bar portion and at least one reference portion, with said bus bar portion in light controlled electrical contact with at least one localized part of said stripe configured electrodes via said photoconductor material.
Claim 5
Dependent Claim
121 words
A memory element for use in photoelectric data recording apparatus comprising a sandwich structure of a top conductive electrode in electrical contact with a photoconductive material in electrical contact with a discontinuous interface layer in electrical contact with a ferroelectric material in electrical contact with a conductive electrode substrate, said top conductive electrode and discontinuous interface layer being injecting contacts with said photoconductor in the light, one of said electrodes comprising a plurality of individual electrodes of stripe configuration and the other of said electrodes comprising a bus bar portion and at least one reference portion, with said bus bar portion in light controlled electrical contact with at least one localized part of said stripe configured electrodes via said photoconductor material.
Claim 6
Dependent Claim
121 words
A memory element for use in photoelectric data recording apparatus comprising a sandwich structure of a top conductive electrode in electrical contact with a photoconductive material in electrical contact with a discontinuous interface layer in electrical contact with a ferroelectric material in electrical contact with a conductive electrode substrate, said top conductive electrode and discontinuous interface layer being injecting contacts with said photoconductor in the light, one of said electrodes comprising a plurality of individual electrodes of stripe configuration and the other of said electrodes comprising a bus bar portion and at least one reference portion, with said bus bar portion in light controlled electrical contact with at least one localized part of said stripe configured electrodes via said photoconductor material.
Claim 7
Dependent Claim
126 words
A memory element for use in photoelectric data recording apparatus comprising a sandwich structure of a top conductive electrode in electrical contact with a photoconductive material in electrical contact with a discontinuous interface layer in electrical contact with a ferroelectric material in electrical contact with a conductive electrode substrate, said top conductive electrode and discontinuous interface layer being blocking contacts with said photoconductor in the dark and injecting in the light, one of said electrodes comprising a plurality of individual electrodes of stripe configuration and the other of said electrodes comprising a bus bar portion and at least one reference portion, with said bus bar portion in light controlled electrical contact with at least one localized part of said stripe configured electrodes via said photoconductor material.
Claim 8
Dependent Claim
126 words
A memory element for use in photoelectric data recording apparatus comprising a sandwich structure of a top conductive electrode in electrical contact with a photoconductive material in electrical contact with a discontinuous interface layer in electrical contact with a ferroelectric material in electrical contact with a conductive electrode substrate, said top conductive electrode and discontinuous interface layer being blocking contacts with said photoconductor in the dark and injecting in the light, one of said electrodes comprising a plurality of individual electrodes of stripe configuration and the other of said electrodes comprising a bus bar portion and at least one reference portion, with said bus bar portion in light controlled electrical contact with at least one localized part of said stripe configured electrodes via said photoconductor material.
Claim 9
Dependent Claim
31 words
The memory element of claim 4 wherein said electrode comprising a bus bar portion and at least one reference portion comprises a bus bar portion and a plurality of reference portions.
Claim 10
Dependent Claim
22 words
The memory element of claim 4 wherein said electrodes are oriented substantially orthogonal to each other within the plane of the device.
Claim 11
Dependent Claim
43 words
The memory element of claim 4 wherein said discontinuous interface layer comprises a thin layer electrically conductive in the direction perpendicular to the plane of the ferroelectric and photoconductor materials and non-electrically conductive in a direction parallel to the plane of said materials.
Claim 12
Dependent Claim
18 words
The memory element of claim 4 wherein said discontinuous interface layer comprises a plurality of electrically conductive islands.
Claim 13
Dependent Claim
39 words
The memory element of claim 4 wherein said discontinuous interface layer comprises a plurality of electrically conductive islands, each of said islands being less in area than the area of a light beam used to address said memory element.
Claim 14
Dependent Claim
44 words
The memory element of claim 9 wherein each of said islands is less in area than the area of a light beam used to address said memory element, and a plurality of said islands is located within the area addressed by such light beam.
Claim 15
Dependent Claim
29 words
The memory element of claim 4 wherein said top electrode is transparent and comprises the bus bar and reference portion configuration and said substrate electrode comprises the stripe configuration.
Claim 16
Dependent Claim
18 words
The memory element of claim 11 wherein the discontinuous interface layer comprises a plurality of electrically conductive islands.
Claim 17
Dependent Claim
33 words
The memory element of claim 11 wherein said reference portion comprises a plurality of portions having an area of at least that encompassed by a light beam used to address said memory element.
Claim 18
Dependent Claim
20 words
The memory element of claim 11 including means for electrically contacting said top conductive electrode and said conductive electrode substrate.
Claim 19
Dependent Claim
39 words
The memory element of claim 11 wherein the discontinuous interface layer comprises a plurality of electrically conductive islands, each of said islands being less in area than the area of a light beam used to address said memory element.
Claim 20
Dependent Claim
44 words
The memory element of claim 15 where each of said islands is less in area than the area of a light beam used to address said memory element, and a plurality of said islands is located within the area addressed by such light beam.
Claim 21
Dependent Claim
39 words
The memory element of claim 16 wherein said conductive electrode substrate comprises a plurality of individual electrodes of stripe configuration and said interface islands are aligned to overlap said electrode stripes, whereby a focusing effect is achieved during addressing.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-08-01 | 1976-01-31 | 1976-08-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-08-01 | 1980-01-31 | 1980-08-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-08-01 | 1984-01-31 | 1984-08-01 | $7700.00 | Window Closed / Lapsed |