Controlled rectifier and triac with laterally off-set gate and auxiliary segments for accelerated turn on

Claim 2

A thyristor comprised of first and second terminal means for facilitating current conduction through said thyristor in its switched on state including a first major contact and a second major contact, respectively, semiconductive means for selectively permitting current conduction between said first and second terminal means in response to a gate signal comprised of a semiconductive element including five layers of one and the opposite conductivity type, said layers being interleaved with adjacent layers being of opposite conductivity type and forming a plurality of P-N junctions, said layers including a first endmost layer and a first intermediate layer next adjacent thereto, said first endmost layer including a gate segment and an auxiliary segment spaced laterally therefrom, said first intermediate layer including an auxiliary zone interposed between said gate segment and said auxiliary segment, a main zone laterally spaced from said auxiliary zone by said auxiliary segment, and injection zone means underlying said auxiliary segment of said endmost layer, said injection zone means uniting said main and auxiliary zones, means for transmitting an amplified gate signal providing a junction bridging conductive path from said auxiliary segment to said auxiliary zone, said first major contact being ohmically associated with said main zone, and said second major contact being ohmically associated with a remaining endmost of said layers.

Claim 3

A thyristor according to claim 1 additionally including means isolating said junction bridging conductive path means from conductive association with said contacts other than through said semiconductive element.

Claim 4

A thyristor according to claim 1 in which said gate segment is centrally positioned and said auxiliary segment is annular and spaced outwardly of said gate segment.

Claim 5

A thyristor according to claim 1 including series resistance means associated with said first intermediate layer to insure uniform peripheral turn on of said main zone thereof.

Claim 6

A thyristor according to claim 1 in which said first endmost layer is divided into a first auxiliary segment next adjacent to said main zone serving as a charge injection source and a laterally spaced second auxiliary segment spaced from said main zone by said first auxiliary segment, said second auxiliary segment constricting the width of said first intermediate layer adjacent thereto to increase the lateral resiStance of said first intermediate layer.

Claim 7

A thyristor according to claim 1 additionally including means associated with the periphery of said semiconductive element for reducing surface currents.

Claim 8

A thyristor according to claim 1 in which said first endmost layer is located laterally inwardly of said main zone and in which beveled edge means of said semiconductive element are provided for reducing surface potential gradients.

Claim 9

A thyristor according to claim 1 additionally including a main current carrying terminal means, conductive plate means interposed between said terminal means and said first major contact, and dielectric means associated with said semiconductive element positioning said conductive plate means relative to said terminal means.

Claim 10

A thyristor according to claim 1 in which said layers of said semiconductive element extend between opposed major surfaces, said remaining endmost layer including a main portion and an auxiliary portion, said first and second major contacts, said main portion, and said main zone are associated with overlapping areas of said opposed major surfaces, and said second major contact, said auxiliary portion, said auxiliary zone, and said conductive path means are associated with overlapping areas of said opposed major surfaces.

Claim 11

A thyristor comprised of a semiconductive element including five layers of one and the opposite conductivity type extending between opposed major surfaces, said layers being interleaved with adjacent layers being of opposite conductivity type and forming a plurality of P-N junctions, said layers including a first endmost layer and a first intermediate layer next adjacent thereto, said first endmost layer including a gate segment and an auxiliary segment spaced laterally therefrom, said first intermediate layer including an auxiliary zone interposed between said gate segment and said auxiliary segment, a main zone laterally spaced from said auxiliary zone by said auxiliary segment, and injection zone means underlying said endmost layer, said injection zone means uniting said main and auxiliary zones, a second endmost layer being divided by a second intermediate layer next adjacent thereto into an auxiliary portion and a main portion, first means providing a junction bridging conductive path from said auxiliary zone to said auxiliary segment, second means providing a junction bridging conductive path from said auxiliary portion to a portion of said second intermediate layer adjacent said main portion, a gate contact ohmically associated with said gate segment, a first major contact ohmically associated with said main zone, a second major contact ohmically associated with said main portion, said first and second major contacts, said main zone, and said main portion being associated with overlapping areas of said opposed major surfaces, said conductive path means, said auxiliary zone, and said auxiliary portion being associated with overlapping areas of said opposed major surfaces, and said auxiliary segment being located in lateral proximity to said main portion.

Claim 12

A thyristor comprised of a semiconductive element including five layers of one and the opposite conductivity type extending between opposed major surfaces, said layers being interleaved with adjacent layers being of opposite conductivity type and forming a plurality of P-N junctions, said layers including a first endmost layer and a first intermediate layer next adjacent thereto, said first endmost layer including a gate segment and an auxiliary segment spaced laterally therefrom, said first intermediate layer including an auxiliary zone interposed between said gate segment and said auxiliary segment, a main zone laterally spaced from said auxiliary zone by said auxiliary segment, and injection zone means underlying said endmost layer, said injection zone means uniting said main and auxiliary zones, a second endmost layer being divided by a second intermediate layer next adjacent thereto into an auxiliary portion and a main portion, first means providing a junction bridging conductive path from said auxiliary zone to said auxiliary segment, second means providing a junction bridging conductive path from said auxiliary portion to a portion of said second intermediate layer adjacent said main portion, a gate contact ohmically associated with said gate segment, a first major contact ohmically associated with said main zone, a second major contact ohmically associated with said main portion, said first and second major contacts, said main zone, and said main portion being associated with overlapping areas of said opposed major surfaces, said conductive path means, said auxiliary zone, and said auxiliary portion being associated with overlapping areas of said opposed major surfaces, and said auxiliary segment being located in lateral proximity to said main portion.

Claim 13

A thyristor according to claim 10 in which said auxiliary portion of said second endmost layer is divided into a first auxiliary portion and a laterally spaced second auxiliary portion, said first auxiliary portion being associated with said second conductive path means and said second auxiliary portion being laterally spaced from and interposed between said first auxiliary portion and said main portion constricting the width of said second intermediate layer adjacent thereto to increase the lateral resistance of said second intermediate layer.

Claim 14

A thyristor comprised of a semiconductive element including five layers of one and the opposite conductivity type extending between opposed major surfaces, said layers being interleaved with adjacent layers being of opposite conductivity type and forming a plurality of P-N junctions, said laYers including a first endmost layer and a first intermediate layer next adjacent thereto, said first endmost layer being formed as a plurality of laterally spaced segments including a gate segment and a plurality of auxiliary segment means, said first intermediate layer including a main zone extending between said auxiliary segment means, an auxiliary zone separated from said main zone by one of said auxiliary segment means, and injection zone means lying interiorly of said first endmost layer, said injection zone means integrally joining said main and auxiliary zones and said auxiliary zone separating said one auxiliary segment means from said gate segment, a gate contact ohmically associated with said gate segment, a first major contact ohmically associated with said main zone, means providing a junction bridging conductive path from said auxiliary zone to a plurality of said auxiliary segment means, additional contact means ohmically associated with a second endmost of said layers including a main portion and an auxiliary portion, said auxiliary portion, said auxiliary zone, said conductive path means, and said additional contact means being associated with overlapping areas of said opposed major surfaces, and said first major contact, said main zone, said main portion, and said additional contact means being associated with overlapping areas of said opposed major surfaces.

Claim 15

A thyristor comprised of a semiconductive element including five layers of one and the opposite conductivity type extending between opposed major surfaces, said layers being interleaved with adjacent layers being of opposite conductivity type and forming a plurality of P-N junctions, said laYers including a first endmost layer and a first intermediate layer next adjacent thereto, said first endmost layer being formed as a plurality of laterally spaced segments including a gate segment and a plurality of auxiliary segment means, said first intermediate layer including a main zone extending between said auxiliary segment means, an auxiliary zone separated from said main zone by one of said auxiliary segment means, and injection zone means lying interiorly of said first endmost layer, said injection zone means integrally joining said main and auxiliary zones and said auxiliary zone separating said one auxiliary segment means from said gate segment, a gate contact ohmically associated with said gate segment, a first major contact ohmically associated with said main zone, means providing a junction bridging conductive path from said auxiliary zone to a plurality of said auxiliary segment means, additional contact means ohmically associated with a second endmost of said layers including a main portion and an auxiliary portion, said auxiliary portion, said auxiliary zone, said conductive path means, and said additional contact means being associated with overlapping areas of said opposed major surfaces, and said first major contact, said main zone, said main portion, and said additional contact means being associated with overlapping areas of said opposed major surfaces.

Claim 16

A thyristor according to claim 12 in which a second intermediate layer adjacent said second endmost layer divides said main portion and said auxiliary portion thereof into laterally spaced relation and said additional contact means includes a second major contact associated with said main portion and means providing a junction bridging conductive path from said auxiliary portion to a portion of said second intermediate layer separating said main and auxiliary portions.

Claim 17

A thyristor according to claim 12 in which said auxiliary segments are integrally joined.

Claim 18

A thyristor according to claim 12 in which said auxiliary segment means are integrally joined and said conductive path means is comprised of conduction means ohmically associated with said semiconductive element at the integral joinder of said auxiliary segment means.

Claim 19

A thyristor according to claim 12 in which said auxiliary segment means are located adjacent spaced edge portions of said main zone and said auxiliary segment means include interconnecting means.

Claim 20

A thyristor according to claim 12 in which a plurality of auxiliary zones are provided each separated from said main zone by one of said auxiliary segment means.

Claim 21

A thyristor comprised of a semiconductive element including five layers of one and the opposite conductivity type extending between opposed major surfaces, said layers being interleaved with adjacent layers being of opposite conductivity type and forming a plurality of P-N junctions, said layers including a first endmost layer and a first intermediate layer next adjacent thereto. said first endmost layer being formed as a plurality of laterally spaced segments including a gate segment and a plurality of auxiliary segment means. said first intermediate layer including a main zone extending between said auxiliary segment means, a plurality of auxiliary zones each separated from said main zone by one of said auxiliary segment means, and injection zone means lying directly interiorly of said first endmost layer integrally joining said main and auxiliary zones, one of said auxiliary zones laterally spacing said gate segment from an auxiliary segment means, a gate contact ohmically associated with said gate segment, a first major contact ohmically associated with said main zone, first means providing a junction bridging conductive path from each of said auxiliary zones to adjacent of said auxiliary segment means, a second endmost layer being divided by a second intermediate layer next adjacent thereto into a main portion and a plurality of auxiliary portions, second means providing a junction bridging conductive path from said auxiliary portions to said second intermediate layer adjacent said main portion, a second major contact ohmically associated with said main portion, said first and second main contacts, said main zone, and said main portion being associated with overlapping areas of said opposed major surfaces, said conductive path means, said auxiliary zones, and said auxiliary portion being associated with overlapping areas of said opposed major surfaces, and said auxiliary segment means being located with an edge in lateral proximity to said main portion.

Claim 22

A thyristor comprised of a semiconductive element including five layers of one and the opposite conductivity type extending between opposed major surfaces, said layers being interleaved with adjacent layers being of opposite conductivity type and forming a plurality of P-N junctions, said layers including a first endmost layer and a first intermediate layer next adjacent thereto. said first endmost layer being formed as a plurality of laterally spaced segments including a gate segment and a plurality of auxiliary segment means. said first intermediate layer including a main zone extending between said auxiliary segment means, a plurality of auxiliary zones each separated from said main zone by one of said auxiliary segment means, and injection zone means lying directly interiorly of said first endmost layer integrally joining said main and auxiliary zones, one of said auxiliary zones laterally spacing said gate segment from an auxiliary segment means, a gate contact ohmically associated with said gate segment, a first major contact ohmically associated with said main zone, first means providing a junction bridging conductive path from each of said auxiliary zones to adjacent of said auxiliary segment means, a second endmost layer being divided by a second intermediate layer next adjacent thereto into a main portion and a plurality of auxiliary portions, second means providing a junction bridging conductive path from said auxiliary portions to said second intermediate layer adjacent said main portion, a second major contact ohmically associated with said main portion, said first and second main contacts, said main zone, and said main portion being associated with overlapping areas of said opposed major surfaces, said conductive path means, said auxiliary zones, and said auxiliary portion being associated with overlapping areas of said opposed major surfaces, and said auxiliary segment means being located with an edge in lateral proximity to said main portion.

Claim 23

A thyristor according to claim 18 in which said auxiliary portions are integrally joined.

Claim 24

A semiconductor switch comprising a single semiconductive crystal means having integrated therein a remote gate main current carrying thyristor crystal means and a remote gate auxiliary thyristor crystal means, each of said thyristor crystal means including a gate layer, a first emitter layer, a first base layer, a second base layer, and a second emitter layer sequentially related, adjacent layers being of opposite conductivity type and forming a plurality of P-N junctions therebetween. said emitter and base layers of said main and auxiliary thyristor crystal means being integrally related, said gate layers of said main and auxiliary thyristor means being laterally spaced, gate means associated with said auxiliary gate layer, means providing a junction bridging conductive path from said auxiliary first emitter layer to said main gate layer, a major current carrying contact ohmically associated with said main first emitter layer, and additional contact means ohmically associated with said second emitter layers.

Claim 25

A semiconductor switch comprising a single semiconductive crystal means having integrated therein a remote gate main current carrying thyristor crystal means and a remote gate auxiliary thyristor crystal means, each of said thyristor crystal means including a gate layer, a first emitter layer, a first base layer, a second base layer, and a second emitter layer sequentially related, adjacent layers being of opposite conductivity type and forming a plurality of P-N junctions therebetween. said emitter and base layers of said main and auxiliary thyristor crystal means being integrally related, said gate layers of said main and auxiliary thyristor means being laterally spaced, gate means associated with said auxiliary gate layer, means providing a junction bridging conductive path from said auxiliary first emitter layer to said main gate layer, a major current carrying contact ohmically associated with said main first emitter layer, and additional contact means ohmically associated with said second emitter layers.

Claim 26

A semiconductor switch comprising a single semiconductive crystal means having integrated therein a remote gate main current carrying thyristor crystal means and a remote gate auxiliary thyristor crystal means, said remote gate main current carrying thyristor means including a gate layer, a first emitter layer, a first base layer, a second base layer, and a second emitter layer sequentially related, adjacent layers being of opposite conductivity type and forming a plurality of P-N junctions therebetween, said auxiliary thyristor means including a gate layer, a first emitter layer, a first base layer, a second base layer, and a second emitter layer sequentially related, adjacent layers being of opposite conductivity type and forming a plurality of P-N junctions therebetween, corresponding emitter and base layers of said main and auxiliary thyristor means being integrally related with said main gate later lying adjacent the joinder of said thyristor means and said auxiliary gate layer being laterally spaced from said main gate layer by said auxiliary first emitter layer, gate means associated with said gate layer of said auxiliary thyristor means, common current carrying terminal means associated with said second emitter layers of said thyristor means, separate current carrying terminal means associated with each of said first emitter layers of said thyristor means and laterally spaced from said gate layer, and means for providing a conductive path between said auxiliary thyristor separate terminal means and an edge of said main gate layer adjacent said auxiliary thyristor means for laterally biasing said gate layer in response to a signal supplied to said gate means so that charge injection by said gate layer into said anode base layer preferentially occurs only along an edge closest to said terminal means associated with said first emitter layer of said main thyristor means.

Claim 27

A semiconductor switch comprising a single semiconductive crystal means having integrated therein a remote gate main current carrying thyristor crystal means and a remote gate auxiliary thyristor crystal means, said remote gate main current carrying thyristor means including a gate layer, a first emitter layer, a first base layer, a second base layer, and a second emitter layer sequentially related, adjacent layers being of opposite conductivity type and forming a plurality of P-N junctions therebetween, said auxiliary thyristor means including a gate layer, a first emitter layer, a first base layer, a second base layer, and a second emitter layer sequentially related, adjacent layers being of opposite conductivity type and forming a plurality of P-N junctions therebetween, corresponding emitter and base layers of said main and auxiliary thyristor means being integrally related with said main gate later lying adjacent the joinder of said thyristor means and said auxiliary gate layer being laterally spaced from said main gate layer by said auxiliary first emitter layer, gate means associated with said gate layer of said auxiliary thyristor means, common current carrying terminal means associated with said second emitter layers of said thyristor means, separate current carrying terminal means associated with each of said first emitter layers of said thyristor means and laterally spaced from said gate layer, and means for providing a conductive path between said auxiliary thyristor separate terminal means and an edge of said main gate layer adjacent said auxiliary thyristor means for laterally biasing said gate layer in response to a signal supplied to said gate means so that charge injection by said gate layer into said anode base layer preferentially occurs only along an edge closest to said terminal means associated with said first emitter layer of said main thyristor means.

Claim 28

A semiconductor switch according to claim 20 in which said auxiliary thyristor means is located adjacent opposed lateral extremities of said main current carrying thyristor means.

Claim 29

A semiconductor switch according to claim 21 additionally including means isolating said junction bridging conductive path means from conductive association with said terminal means other than through said semiconductive crystal means.

Claim 30

A semiconductor switch comprising a single semiconductive crystal means having integrated therein a remote gate main current carrying thyristor crystal means and a remote gate auxiliary thyristor crystal means, each of said thyristor crystal means including a gate layer, a first emitter layer, a first base layer, a second base layer, and a second emitter layer sequentially related, adjacent layers being of opposite conductivity type and forming a plurality of P-N junctions therebetween, said first emitter and said base layers of said main and auxiliary thyristor means being integrally related, said second emitter layers and said gate layers of said main and auxiliary thyristor means being laterally spaced, said main gate layer lying in lateral proximity to said main second emitter layer, gate means associated with said auxiliary gate layer, first means providing a junction bridging conductive path from said auxiliary first emitter layer to said main gate layer, second means providing a junction bridging conductive path from said auxiliary second emitter layer to a portion of said second base layer adjacent said main second emitter layer, and major contacts ohmically associated with said main emitter layers.

Claim 31

A semiconductor switch comprising a single semiconductive crystal means having integrated therein a remote gate main current carrying thyristor crystal means and a remote gate auxiliary thyristor crystal means, each of said thyristor crystal means including a gate layer, a first emitter layer, a first base layer, a second base layer, and a second emitter layer sequentially related, adjacent layers being of opposite conductivity type and forming a plurality of P-N junctions therebetween, said first emitter and said base layers of said main and auxiliary thyristor means being integrally related, said second emitter layers and said gate layers of said main and auxiliary thyristor means being laterally spaced, said main gate layer lying in lateral proximity to said main second emitter layer, gate means associated with said auxiliary gate layer, first means providing a junction bridging conductive path from said auxiliary first emitter layer to said main gate layer, second means providing a junction bridging conductive path from said auxiliary second emitter layer to a portion of said second base layer adjacent said main second emitter layer, and major contacts ohmically associated with said main emitter layers.

Claim 32

A triac having improved switching characteristics comprising a single semiconductive crystal means having integrated therein main current carrying triac crystal means and auxiliary triac crystal means, each of said triac crystal means including a first endmost layer, a first intermediate layer next adjacent thereto, a central layer, a second endmost layer, and a second intermediate layer interposed between said second endmost layer and said central layer, said layers being sequentially related with adjacent layers being of opposite conductivity type and forming a plurality of P-N junctions therebetween, said auxiliary triac means first endmost layer including a first auxiliary segment and a gate segment laterally spaced therefrom, said main triac means first endmost layer including a main segment and a second auxiliary segment laterally spaced therefrom, said first intermediate, central, second intermediate, and second endmost layers of said triac crystal means being integrally formed, a first major contact ohmically associated with said first endmost layer and said first intermediate layer of said main triac crystal means, a second major contact ohmically associated with and common to said second endmost and second intermediate layers of said triac crystal means, first means providing a junction bridging conductive path from said auxiliary triac means first auxiliary segment to said main triac means first intermediate layer, second means providing a junction bridging conductive path from said auxiliary triac means first intermediate layer to said main triac means second auxiliary segment, and gate means ohmically associated with said gate segment and said auxiliary triac means first intermediate layer.

Claim 33

A triac having improved switching characteristics comprising a single semiconductive crystal means having integrated therein main current carrying triac crystal means and auxiliary triac crystal means, each of said triac crystal means including a first endmost layer, a first intermediate layer next adjacent thereto, a central layer, a second endmost layer, and a second intermediate layer interposed between said second endmost layer and said central layer, said layers being sequentially related with adjacent layers being of opposite conductivity type and forming a plurality of P-N junctions therebetween, said auxiliary triac means first endmost layer including a first auxiliary segment and a gate segment laterally spaced therefrom, said main triac means first endmost layer including a main segment and a second auxiliary segment laterally spaced therefrom, said first intermediate, central, second intermediate, and second endmost layers of said triac crystal means being integrally formed, a first major contact ohmically associated with said first endmost layer and said first intermediate layer of said main triac crystal means, a second major contact ohmically associated with and common to said second endmost and second intermediate layers of said triac crystal means, first means providing a junction bridging conductive path from said auxiliary triac means first auxiliary segment to said main triac means first intermediate layer, second means providing a junction bridging conductive path from said auxiliary triac means first intermediate layer to said main triac means second auxiliary segment, and gate means ohmically associated with said gate segment and said auxiliary triac means first intermediate layer.

Claim 34

A triac according to claim 25 additionally including means isolating said junction bridging conductive path means from conductive association with said contacts other than through said semiconductive element.

Claim 35

A triac according to claim 25 additionally including means associated with the periphery of said semiconductive crystal means for reducing surface currents.

Claim 36

A triac according to claim 25 in which said semiconductive crystal means is peripherally beveled to reduce surface potential gradients.

Claim 37

A triac according to claim 25 in which said gate means is located centrally of semiconductive crystal means.

Claim 38

A bilateral semiconductor switch comprising a semiconductive element including five layers of one and the opposite conductivity tyPe, said layers being interleaved with adjacent layers being of opposite conductivity type and forming a plurality of P-N junctions, said layers including a first endmost layer and a first intermediate layer adjacent thereto, said first endmost layer including a main segment, a first auxiliary segment laterally spaced therefrom, a gate segment laterally spaced from said first auxiliary segment, and a second auxiliary segment laterally spaced from said gate segment, said first intermediate layer including a main injection zone underlying said main segment, a first auxiliary zone lying between said first auxiliary segment and said main segment, a gate zone lying between said first auxiliary segment and said gate segment, a second auxiliary zone lying between said gate segment and said second auxiliary segment, auxiliary injection zones underlying said gate and auxiliary segments, and a main zone separated from said gate segment by said second auxiliary zone, said zones of said first intermediate layer being integrally related, a second endmost layer having a major portion thereof spaced laterally from said first endmost layer, a second intermediate layer located adjacent said second endmost layer including a base zone underlying said second endmost layer and an emitter zone laterally related to said second endmost layer, a first major contact ohmically associated with said main segment of said first endmost layer and said main zone of said first intermediate layer, a second major contact ohmically associated with said second endmost layer and said emitter zone of said second intermediate layer, first means providing a junction bridging conductive path from said first auxiliary segment to said first auxiliary zone, second means providing a junction bridging conductive path from said second auxiliary segment to said second auxiliary zone, and gate means ohmically associated with said gate segment and said gate zone.

Claim 39

A bilateral semiconductor switch comprising a semiconductive element including five layers of one and the opposite conductivity tyPe, said layers being interleaved with adjacent layers being of opposite conductivity type and forming a plurality of P-N junctions, said layers including a first endmost layer and a first intermediate layer adjacent thereto, said first endmost layer including a main segment, a first auxiliary segment laterally spaced therefrom, a gate segment laterally spaced from said first auxiliary segment, and a second auxiliary segment laterally spaced from said gate segment, said first intermediate layer including a main injection zone underlying said main segment, a first auxiliary zone lying between said first auxiliary segment and said main segment, a gate zone lying between said first auxiliary segment and said gate segment, a second auxiliary zone lying between said gate segment and said second auxiliary segment, auxiliary injection zones underlying said gate and auxiliary segments, and a main zone separated from said gate segment by said second auxiliary zone, said zones of said first intermediate layer being integrally related, a second endmost layer having a major portion thereof spaced laterally from said first endmost layer, a second intermediate layer located adjacent said second endmost layer including a base zone underlying said second endmost layer and an emitter zone laterally related to said second endmost layer, a first major contact ohmically associated with said main segment of said first endmost layer and said main zone of said first intermediate layer, a second major contact ohmically associated with said second endmost layer and said emitter zone of said second intermediate layer, first means providing a junction bridging conductive path from said first auxiliary segment to said first auxiliary zone, second means providing a junction bridging conductive path from said second auxiliary segment to said second auxiliary zone, and gate means ohmically associated with said gate segment and said gate zone.

Claim 40

A thyristor comprising first and second spaced main current carrying terminal means, first main current carrying thyristor means conductively associated with said terminal means for blocking current flow between said terminal means therethrough and for selectively permitting current flow from said first terminal means to said second terminal means in response to an electrical signal, second main current carrying thyristor means conductively associated with said terminal means for blocking current flow between said terminal means therethrough and for selectively permitting current flow from said second terminal means to said first terminal means in response to an electrical signal, auxiliary thyristor means for amplifying electrical signals supplied to said main thyristor means, and a single gate lead associated with said auxiliary thyristor means for conducting electrical signals for switching said main thyristor means.

Claim 41

A thyristor comprising first and second spaced main current carrying terminal means, first main current carrying thyristor means conductively associated with said terminal means for blocking current flow between said terminal means therethrough and for selectively permitting current flow from said first terminal means to said second terminal means in response to an electrical signal, second main current carrying thyristor means conductively associated with said terminal means for blocking current flow between said terminal means therethrough and for selectively permitting current flow from said second terminal means to said first terminal means in response to an electrical signal, auxiliary thyristor means for amplifying electrical signals supplied to said main thyristor means, and a single gate lead associated with said auxiliary thyristor means for conducting electrical signals for switching said main thyristor means.