Abstract A metal-insulator semiconductor structure for use in particular as a switching element with thermally reversible memory and comprising a semiconductor substrate, a film of amorphous insulator material on the said substrate and a metallic film which is deposited at least partially on the said insulator film, characterized in that the said amorphous insulator film exhibits a resistivity which is lower than the intrinsic resistivity of the said amorphous insulator material and which is comprised between 107 and 1011 Omega -cm at ambient temperature, the decrease in the said resistivity being due to the diffusion of ions into the said amorphous insulator film, the said structure being in a conducting or insulating stage within a predetermined temperature range, in an insulating state above the said range and in a conducting state below the said range.
A metal-insulator-semiconductor structure in accordance with claim 1, said substrate being silicon.
Claim 2
Dependent Claim
13 words
A metal-insulator-semiconductor structure in accordance with claim 1, wherein said metal being gold.
Claim 3
Dependent Claim
23 words
A metal-insulator-semiconductor structure, in accordance with claim 1 wherein said semiconductor substrate includes a metallic electrode for applying a bias to said structure.
Claim 4
Dependent Claim
45 words
A switching device with thermally reversible memory, comprising at least one metal-insulator-semiconductor as defined in claim 1 and means for producing within the insulator film of said amorphous material temperatures selectively causing said structure to be in an insulating state and in a conducting state.
Claim 5
Dependent Claim
14 words
A switching device in accordance with claim 5, said means being a laser beam.