Abstract Process and apparatus for checking transistors and diodes to determine whether a transistor is NPN or PNP, to determine whether the transistor is germanium or silicon and also to determine the polarity of a diode. The checking device may include a pair of spaced terminals, a known alternating voltage source and a known resistance, with the terminals, source and resistance in a chain whereby connecting of the base of the transistor to one terminal and the collector and emitter to the other terminal places the source, terminals, transistor and resistance in a series circuit. A meter may then be used to measure the direction and amplitude of current through the circuit or, alternatively, the direction and amplitude of current can be used to actuate indicating devices, and, if desired, further electrical circuitry for performing additional tests on the transistors.
A process for checking a component having a semiconductor rectifying junction to determine its polarity and basic material which comprises: a. connecting the component in series with a resistor of given resistance and a constant alternating voltage source having a voltage magnitude greater than the forward voltage threshold and less than the reverse breakdown voltage of any junction to be tested; b. measuring a parameter which is proportional to the current through said resistor to obtain a value which represents the constant alternating voltage source magnitude minus the forward voltage drop across the junction of said component under test and thus is inversely related to the value of the forward voltage drop across a junction of the component under test; and c. comparing the measured value of said parameter with known values for components having known polarities and materials.
Claim 2
Dependent Claim
139 words
A process for checking a component having a semiconductor rectifying junction to determine its polarity and basic material which comprises: a. connecting the component in series with a resistor of given resistance and a constant alternating voltage source having a voltage magnitude greater than the forward voltage threshold and less than the reverse breakdown voltage of any junction to be tested; b. measuring a parameter which is proportional to the current through said resistor to obtain a value which represents the constant alternating voltage source magnitude minus the forward voltage drop across the junction of said component under test and thus is inversely related to the value of the forward voltage drop across a junction of the component under test; and c. comparing the measured value of said parameter with known values for components having known polarities and materials.
Claim 3
Dependent Claim
16 words
The process of claim 1 in which the semiconductor rectifying junction is either silicon or germanium.
Claim 4
Dependent Claim
18 words
The process of claim 1 in which the constant alternating voltage source is over 0.7 volts peak voltage.
Claim 5
Dependent Claim
23 words
The process of claim 3 in which the constant alternating voltage source is a 60 Hertz sinusoidal voltage of about 1.3 volts rms.