Method for fabricating semiconductor junctions
Abstract
Abstract A METHOD FOR FORMING SEMICONDUCTOR JUNCTIONS. A SEMICONDUCTOR MATERIAL OF A GIVEN CONDUCTIVITY IS PROVIDED, TWO SEQUENTIAL PASSIVATING LAYERS BEING DISPOSED ON THE SURFACE, THEREOF, THE PASSIVATING LAYERS BEING ADAPTED TO BE ETCHED BY MUTUALLY EXCLUSIVE ETCHING COMPOUNDS. A PORTION OF THE SEMICONDUCTOR SURFACE IS EXPOSED, THE PASSIVATING LAYER ADJACENT THE SURFACE OF THE SEMICONDUCTOR MATERIAL BEING UNDERCUT RELATIVE TO THE UPPER PASSIVATING LAYER. A DOPED OXIDE IS DISPOSED UPON THE SEMICONDUCTOR SURFACE INCLUDING THAT PORTION ADJACENT THE UNDERCUT PASSIVATING LAYER. THE DOPED OXIDE, IS ETCHED IN A MANNER LEAVING PORTIONS OF THE DOPED OXIDE IN INTIMATE CONTACT WITH THE SURFACE OF THE SEMICONDUCTOR MATEIAL SUBSTANTIALLY ADJACENT THE UNDERCUT PASSIVATING LAYER. THE DOPANT IS THEN DIFFUSED INTO THE SEMICONDUCTOR SURFACE FORMING APPROPRIATE SEMICONDUCTOR JUNCTIONS THEREIN.
Inventors
- 👤 Edward J Rice
Bibliographic Details
Claims Analysis
Total Claims: 0References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-07-11 | 1976-01-10 | 1976-07-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-07-11 | 1980-01-10 | 1980-07-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-07-11 | 1984-01-10 | 1984-07-11 | $7700.00 | Window Closed / Lapsed |