Abstract An apparatus for detecting radiation emanating from a source movable along a path has an elongated radiation-sensitive electronic semiconductor of a first crystalline phase. The semiconductor is positionable substantially parallel to the path. Inclusions of a second crystalline phase are contained in the semiconductor and have an electrical conductivity higher than the first phase. The inclusions are orientated substantially perpendicular to the current flow in the semiconductor response to the radiation. Two magnetic structures are disposed one behind the other laterally of the semiconductor along its longitudinal dimension and have respective magnetic fields which penetrate the semiconductor in mutually opposite directions.
Apparatus for detecting radiation emanating from a source movable along a path, comprising an elongated radiation sensitive electric semiconductor composed of a first crystalline phase and inclusions of a second crystalline phase having higher electrical conductivity than said first phase, said semiconductor being positionable to extend substantially parallel to said pAth with said inclusions being orientated substantially perpendicularly to the current flow in said semiconductor in response to said radiation, and two magnetic structures disposed one behind the other laterally of said semiconductor along said longitudinal dimension, said magnetic structures having respective magnetic fields which penetrate said semiconductor in mutually opposite directions.
Claim 2
Dependent Claim
102 words
Apparatus for detecting radiation emanating from a source movable along a path, comprising an elongated radiation sensitive electric semiconductor composed of a first crystalline phase and inclusions of a second crystalline phase having higher electrical conductivity than said first phase, said semiconductor being positionable to extend substantially parallel to said pAth with said inclusions being orientated substantially perpendicularly to the current flow in said semiconductor in response to said radiation, and two magnetic structures disposed one behind the other laterally of said semiconductor along said longitudinal dimension, said magnetic structures having respective magnetic fields which penetrate said semiconductor in mutually opposite directions.
Claim 3
Dependent Claim
28 words
In the apparatus of claim 1, wherein said radiation is directed toward a plane of said semiconductor, said inclusions being orientated in said semiconductor perpendicularly to said plane.
Claim 4
Dependent Claim
23 words
In the apparatus of claim 1, said semiconductor being made of indium antimonide (InSb), and said inclusions being made of nickel antimonide (NiSb).