Method of forming electrical conductors
Abstract
Abstract D R A W I N G THE PRESENT INVENTION RELATES TO A METHOD OF FORMING ELECTRICAL CONDUCTORS TO SELECTED REGIONS OF A SEMICONDUCTOR WAFER. AN ALUMINUM FILM OF APPROXIMATELY 10,000 ANGSTROM IS EVAPORATED UPON A SILICON DIOXIDE INSULATIVE EVAPORATION MASK WHICH HAS BEEN FORMED ON A SILICON WAFER. A CONDUCTOR MASK IS FORMED UPON SELECTED AREAS OF THE ALUMINUM FILM. THE MASKED ALUMINUM FILM IS PLACED UPON A SPINNER. PHOSPHORIC ACID IS CONTINUOUSLY POURED NEAR THE CENTER OF THE MASKED METAL FILM. THE MASKED ALUMINUM FILM IS SPUN FOR A PERIOD OF APPROXIMATELY FOUR MINUTES, TO REMOVE THE PORTIONS OF THE ALUMINUM FILM WHICH ARE NOT COATED BY THE CONDUCTOR MASK, IN ORDER TO FORM ELECTRICAL CONDUCTORS IN CONTACT WITH SELECTED REGIONS OF THE SILICON WAFER.
Inventors
- 👤 Richard M Clinehens
- 👤 John K Stewart Jr
- 👤 Robert W Ditmer
Bibliographic Details
Claims Analysis
Total Claims: 0References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-07-04 | 1976-01-03 | 1976-07-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-07-04 | 1980-01-03 | 1980-07-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-07-04 | 1984-01-03 | 1984-07-04 | $7700.00 | Window Closed / Lapsed |