Patent US3674549A successfully refreshed from Google Patents.
US3674549A
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US
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Manufacturing process for an insb thin film semiconductor element
Assignee: Pioneer Corp
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Filing: 1969-02-25
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Granted: 1972-07-04
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Expires: 1989-02-25
Abstract
Abstract A PROCESS FOR PRODUCING A THIN FILM SEMICONDUCTOR ELEMENT OF INSB HAVING ELECTRON MOBILITY AND HALL COEFFICIENT VALUES SIMILAR TO BULK INSB IS PROVIDED, WHEREIN INSB AND SB ARE EVAPORATED SIMULTANEOUSLY FROM SEPARATE SOURCES IN A HIGH VACUUM TO DEPOSIT A FILM, WHEREIN INSB AND SB ARE EVAPORATED SIMULTANEOUSLY UPON CONJUGATING INSB AND SB ON A SINGLE COMMON VAPOR SOURCE IN A HIGH VACUUM, OR WHEREIN INSB, PRODUCED BY THE ZONE MELTING METHOD WITH A RATIO OF IN TO SB OF 1.5 TO 2 IN WEIGHT, IS EVAPORATED.
Inventors
- 👤 Masahide Ohshita
- 👤 Tsunehiro Tsukagoshi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 22:38
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/0617; H; H10; H10F; H10F71/00; H10F71/127; H10N; H10N52/00; H10N52/80; H10N52/85; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544; Y10; Y10S; Y10S148/00; Y10S148/005; Y10S148/006; Y10S148/065; Y10S148/13; Y10S148/15; Y10S148/169
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-07-04 | 1976-01-03 | 1976-07-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-07-04 | 1980-01-03 | 1980-07-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-07-04 | 1984-01-03 | 1984-07-04 | $7700.00 | Window Closed / Lapsed |