Patent US3673063A successfully refreshed from Google Patents.
US3673063A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Production of lead-tin-telluride material for infrared detectors
Assignee: JM Huber Corp
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Filing: 1971-03-31
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Granted: 1972-06-27
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Expires: 1991-03-31
Abstract
Abstract The invention is a method of producing lead-tin-telluride material for use in making diffused junction photodiodes. Detector diodes which are made from such material can be produced directly from a wafer without the necessity of using conventional time-consuming back-etching. The steps of my method comprise slicing thin wafers from a pre-alloyed boule, mechanically polishing the sliced wafers to remove major imperfections in the flat surfaces, electropolishing said wafers to produce undamaged clean surfaces and finally annealing the sliced and polished wafers to reduce Hall carrier concentration.
Inventors
- 👤 Shirley L Wakefield
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 20:26
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10F; H10F99/00; H10P52/00; H10P95/00; H10P95/70; Y; Y10; Y10S; Y10S438/00; Y10S438/974
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
36 words
The method of claim 1 in which the slicing is accomplished with a wire saw using 5 mil wire with a slurry of silicon carbide to produce wafers having a thickness of 40 to 50 mils.
Claim 2
Dependent Claim
36 words
The method of claim 2 in which the mechanical polishing is automatically accomplished with particles of aluminum oxide of the order of 15 mils in size to reduce the thickness of the wafers to 30 mils.
Claim 3
Dependent Claim
21 words
The method of claim 3 in which the wafers are further reduced in thickness to 20 to 25 mils by electroetching.
Claim 4
Dependent Claim
20 words
The method of claim 4 in which the completed wafers are inspected by Laue back reflection x-ray and microscopic examination.
Claim 5
Dependent Claim
19 words
The method of claim 4 in which the completed wafers are annealed at elevated temperatures in an inert atmosphere.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-06-27 | 1975-12-27 | 1976-06-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-06-27 | 1979-12-27 | 1980-06-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-06-27 | 1983-12-27 | 1984-06-27 | $7700.00 | Window Closed / Lapsed |