Patent US3672983A successfully refreshed from Google Patents.
US3672983A
Expired / Lapsed
US
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Process for making metal contacts to high speed transistors and product formed thereby
Assignee: International Business Machines Corp
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Filing: 1970-01-09
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Granted: 1972-06-27
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Expires: 1990-01-09
Abstract
Abstract IN A SEMICONDUCTOR DEVICE, THE EMITTER AND BASE METAL CONTACT STRIPES ARE AT DIFFERENT LEVELS AND ARE SEPARATED BY SILICON DIOXIDE AND SILICON NITRIDE. BY USING SUCH A SILICON DIOXIDE SEPARATORY LAYER IN COMBINATION WITH AN INITIAL SILICON NITRIDE COATING OVER THE EMITTER AND BASE REGIONS IN THE SEMICONDUCTOR SUBSTRATE, THE SILICON NITRIDE COATING BEING ETCHED DURING PROCESSING, A HIGH SPEED TRANSISTOR HAVING A VERY SMALL EMITTER-BASE CONTACT SPACING, AND A SMALL EMITTER STRIPE WIDTH IS OBTAINED. D R A W I N G
Inventors
- 👤 David De Witt
- 👤 Vir A Dhaka
- 👤 Avtar S Oberai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 08:58
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W20/00; H10W20/40; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/049; Y10S148/051; Y10S148/173
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-06-27 | 1975-12-27 | 1976-06-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-06-27 | 1979-12-27 | 1980-06-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-06-27 | 1983-12-27 | 1984-06-27 | $7700.00 | Window Closed / Lapsed |