US3672034A
Expired / Lapsed
US
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Method for bonding a beam-lead device to a substrate
Assignee: AT&T Inc
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Filing: 1970-01-14
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Granted: 1972-06-27
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Expires: 1990-01-14
Abstract
Abstract A process and an apparatus are disclosed for the thermocompression bonding of beam-lead integrated circuits to a series of conductor patterns located on a substrate. The flat tip of a hollow rectangular rod comprises the heating unit. The beam-lead device is positioned on a substrate; the substrate is mounted on a carrier; and, illustratively, the carrier is located on a wobble table. When appropriate means undulate the wobble table, the beam leads are rocked into successive contact with the heating unit and thereby are bonded to the substrate.
Inventors
- 👤 James E Clark
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 21:56
CPC Classifications
B; B23; B23K; B23K20/00; B23K20/02; B23K20/023; H; H10; H10P; H10P72/00; H10P72/04; H10P72/0446; H10W; H10W72/00; H10W72/071; H10W72/0711; H10W72/072; H10W72/07231; H10W72/07236; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49121
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
119 words
The method of bonding an array of leads of a multi-lead semiconductor device to electrically conductive areas on a first surface of a substrate comprising the steps of: positioning the leads of the device in alignment with the conductive areas on the substrate and a bonding tool having a bonding face that faces the first surface of the substrate; and bonding the array of leads to the conductive areas on the substrate by rocking either the bonding face toward the substrate or the substrate toward the bonding face to establish bonding contact successively between the bonding face and at least some of the different leads of the semiconductor device that are located between the bonding face and the substrate.
Claim 2
Independent Claim
119 words
The method of bonding an array of leads of a multi-lead semiconductor device to electrically conductive areas on a first surface of a substrate comprising the steps of: positioning the leads of the device in alignment with the conductive areas on the substrate and a bonding tool having a bonding face that faces the first surface of the substrate; and bonding the array of leads to the conductive areas on the substrate by rocking either the bonding face toward the substrate or the substrate toward the bonding face to establish bonding contact successively between the bonding face and at least some of the different leads of the semiconductor device that are located between the bonding face and the substrate.
Claim 3
Dependent Claim
92 words
The method of claim 1 wherein the bonding step comprises the steps of: tilting either the substrate or the bonding face to reduce the distance between part of the bonding face and part of the substrate enough to establish a region where bonding contact can be made between the bonding face and leads located between the bonding face and the substrate and moving the region where bonding contact can be made to establish bonding contact successively between the bonding face and at least some of the different leads of the semiconductor device.
Claim 4
Dependent Claim
39 words
The method of claim 2 wherein the region where bonding contact can be made is moved by rotating about an axis through the substrate either a means for tilting the substrate or a means for tilting the bonding face.
Claim 5
Dependent Claim
26 words
The method of claim 1 wherein the bonding step comprises the step of undulating the substrate about a point located in or near its first surface.
Claim 6
Dependent Claim
52 words
The method of claim 1 wherein the multi-lead semiconductor device has at least three sides and the bonding step comprises the step of successively rocking each side of the semiconductor device toward the bonding face to establish bonding contact between any leads on each side of the device and the bonding face.
Claim 7
Dependent Claim
101 words
The method of claim 1 further comprising the steps of: positioning a second multi-lead semiconductor device in alignment with the bonding tool and a second set of conductive areas on the substrate; and bonding the array of leads of the second semiconductor device to the second set of conductive areas on the substrate by rocking either the bonding face toward the substrate or the substrate toward the bonding face to establish bonding contact successively between the bonding face and at least some of the different leads of the second semiconductor device that are located between the bonding face and the substrate.
Claim 8
Dependent Claim
116 words
The method of claim 1 wherein the bonding face lies in a plane perpendicular to an axis of the bonding tool and the bonding step comprises the steps of: tilting the substrate about a point on a line collinear with said axis to form a non-zero angle with the plane of the bonding face to establish a region where bonding contact can be made between the bonding face and any leads located in said region between the bonding face and the substrate and moving about said axis the region where bonding contact can be made to establish bonding contact successively between the bonding face and at least some of the different leads of the semiconductor device.
Claim 9
Dependent Claim
39 words
The method of claim 7 wherein the region where bonding contact can be made is moved about said axis by rotating about said axis a means for tilting the substrate to form the non-zero angle with the bonding face.
Claim 10
Dependent Claim
99 words
The method of claim 1 wherein the bonding face lies in a plane and the bonding step comprises the steps of: tilting the bonding face to form a non-zero angle with the substrate to establish a region where bonding contact can be made between the bonding face and any leads located in said region between the bonding face and the substrate and moving about an axis perpendicular to the substrate the region where bonding contact can be made to establish bonding contact successively between the bonding face and at least some of the different leads of the semiconductor device.
Claim 11
Dependent Claim
39 words
The method of claim 9 wherein the region where bonding contact can be made is moved about said axis by rotating about said axis a means for tilting the bonding face to form the non-zero angle with the substrate.
Claim 12
Independent Claim
131 words
The method of bonding an array of leads of a multi-lead integrated circuit semiconductor device to electrically conductive areas on a substrate comprising of steps of: positioning the leads of the device in alignment with both the conductive areas on the substrate and a thermocompression bonding tool having a tip that faces the conductive areas on the substrate and includes a recess substantially conforming to the device; and bonding the array of leads to the conductive areas on the substrate; wherein the bonding step is characterized by the step of rocking either the bonding face toward the substrate or the substrate toward the bonding face to establish bonding contact successively between the bonding face and different leads of the semiconductor device that are located between the bonding tip and the substrate.
Claim 13
Independent Claim
131 words
The method of bonding an array of leads of a multi-lead integrated circuit semiconductor device to electrically conductive areas on a substrate comprising of steps of: positioning the leads of the device in alignment with both the conductive areas on the substrate and a thermocompression bonding tool having a tip that faces the conductive areas on the substrate and includes a recess substantially conforming to the device; and bonding the array of leads to the conductive areas on the substrate; wherein the bonding step is characterized by the step of rocking either the bonding face toward the substrate or the substrate toward the bonding face to establish bonding contact successively between the bonding face and different leads of the semiconductor device that are located between the bonding tip and the substrate.
Claim 14
Dependent Claim
67 words
The method of claim 11 wherein: the multi-lead device is rectangular; the recess of the bonding tool tip is rectangular, thereby defining a four-sided tip; and during the bonding operation each side of the bonding tool tip successively is rocked toward the substrate to make bonding contact between the bonding tool tip and leads of the device that are located between the bonding tip and the substrate.
Claim 15
Dependent Claim
51 words
The method of claim 12 wherein each side of the bonding tool tip is rocked to establish bonding contact successively between that side of the bonding tip and at least some of any leads of the semiconductor device that are located between that side of the bonding tip and the substrate.
Claim 16
Dependent Claim
19 words
The method of claim 13 wherein the multi-lead integrated circuit device that is bonded is a beam lead device.
Claim 17
Dependent Claim
67 words
The method of claim 11 wherein; the multi-lead device is rectangular; the recess of the bonding tool tip is rectangular, thereby defining a four-sided tip; and during the bonding operation each side of the Device successively is rocked toward the bonding tool tip to make bonding contact between the bonding tool tip and leads of the device that are located between the bonding tip and the substrate.
Claim 18
Dependent Claim
42 words
The method of claim 15 wherein each side of the multi-lead integrated circuit device is rocked to establish bonding contact successively between the bonding tool tip and at least some of any leads of the device that are located on that side.
Claim 19
Dependent Claim
16 words
The method of claim 16 wherein the multi-lead integrated circuit device is a beam lead device.
Claim 20
Independent Claim
112 words
A method of bonding a plurality of beam leads of a beam lead semiconductor device to electrically conductive areas on a substrate comprising the steps of: positioning the device between the conductive areas and a bonding face of a bonding tool with the beam leads in alignment with the conductive areas on the substrate; and bonding the leads to the conductive areas on the substrate by rocking either the bonding face toward the substrate or the substrate toward the bonding face to establish bonding contact successively between the bonding face and at least some of the different leads of the semiconductor device that are located between the bonding face and the substrate.
Claim 21
Independent Claim
112 words
A method of bonding a plurality of beam leads of a beam lead semiconductor device to electrically conductive areas on a substrate comprising the steps of: positioning the device between the conductive areas and a bonding face of a bonding tool with the beam leads in alignment with the conductive areas on the substrate; and bonding the leads to the conductive areas on the substrate by rocking either the bonding face toward the substrate or the substrate toward the bonding face to establish bonding contact successively between the bonding face and at least some of the different leads of the semiconductor device that are located between the bonding face and the substrate.
Claim 22
Dependent Claim
88 words
The method of claim 18 wherein the rocking step comprises the steps of: tilting either the substrate or the bonding face to form a non-zero angle between them and to establish a region where bonding contact can be made between the bonding face and any leads located in said region between the bonding face and the substrate and moving the region where bonding contact can be made to establish bonding contact successively between the bonding face and at least some of the different leads of the semiconductor device.
Claim 23
Dependent Claim
39 words
The method of claim 19 wherein the region where bonding contact can be made is moved by rotating about an axis through the substrate either a means for tilting the substrate or a means for tilting the bonding face.
Claim 24
Dependent Claim
24 words
The method of claim 20 wherein said axis of rotation passes through approximately the centers of the bonding face and the beam lead device.
Claim 25
Dependent Claim
28 words
The method of claim 18 wherein the semiconductor device is positioned by the bonding tool with its beam leads in alignment with the conductive areas on the substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-06-27 | 1975-12-27 | 1976-06-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-06-27 | 1979-12-27 | 1980-06-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-06-27 | 1983-12-27 | 1984-06-27 | $7700.00 | Window Closed / Lapsed |