Patent US3671338A successfully refreshed from Google Patents.
US3671338A
Expired / Lapsed
US
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Method of manufacturing a semiconductor photo-sensitive device
Assignee: Toshiba Corp
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Filing: 1969-12-05
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Granted: 1972-06-20
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Expires: 1989-12-05
Abstract
Abstract A METHOD OF MANUFACTURING A SEMICONDUCTOR PHOTOSENSITIVE DEVICE INCLUDES THE STEPS OF FORMING A POLY CRYSTAL FORMATION LAYER ON THE FLAT SURFACE OF AN N-TYPE SEMICONDUCTOR SUBSTRATE EXCLUDING THE PERIPHERAL EDGE THEREOF, DEPOSITING A CRYSTAL LAYER ON THE SURFACE INCLUDING A POLY CRYSTAL REGION OVERLAYING THE POLY CRYSTAL FORMATION LAYER, FORMING A PLURALITY OF PN JUNCTIONS IN THE OPPOSITE SURFACE OF THE SUBSTRATE, AND REMOVING THE POLY CRYSTAL REGION, THEREBY FORMING A RECESS STRUCTURE SUBSTRATE.
Inventors
- 👤 Akihiro Fujii
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 16:42
CPC Classifications
H; H10; H10D; H10D99/00; H10F; H10F71/00; H10P; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/051; Y10S148/122; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/977
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-06-20 | 1975-12-20 | 1976-06-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-06-20 | 1979-12-20 | 1980-06-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-06-20 | 1983-12-20 | 1984-06-20 | $7700.00 | Window Closed / Lapsed |