Patent US3669757A successfully refreshed from Google Patents.
US3669757A
Expired / Lapsed
US
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Method of making and using diced single crystal impurity source
Assignee: International Business Machines Corp
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Filing: 1970-03-23
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Granted: 1972-06-13
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Expires: 1990-03-23
Abstract
Abstract A METHOD FOR PRODUCING HOMOGENOUS DILUTE DOPANT MATERIAL FOR USE IN GROWING SEMICONDUCTOR DEVICE CRYSTALS OF DESIRED RESISTIVITY FROM A MELT WHICH INCLUDES THE DILUTE DOPANT MATERIAL. THE METHOD COMPRISES PROVIDING THE DILUTE DOPANT MATERIAL IN SINGLE CRYSTAL ALLOY FORM, MEASURING THE RESISTIVITY FROM A MELT WHICH INCLUDES THE CUTTING A PORTION OF THE CRYSTAL HAVING RESISTIVITES WITHIN A DESIRED RANGE, SLICING SAID PORTION, POLISHING, DICING AND CLEANING THE SLICES AND WEIGHING OUT THE REQUIRED AMOUNT OF DICED DOPANT MATERIAL AS NEEDED FOR THE GROWTH OF A SEMICODUCTOR DEVICE CRYSTAL OF DESIRED RESISTIVITY FROM A MELT WHICH INCLUDES THE DICED DOPANT MATERIAL.
Inventors
- 👤 Morris Kaufmann
- 👤 Bernard R Shultz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 16:32
CPC Classifications
C; C30; C30B; C30B13/00; C30B13/08; C30B13/10; C30B15/00; C30B15/02; C30B15/04
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-06-13 | 1975-12-13 | 1976-06-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-06-13 | 1979-12-13 | 1980-06-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-06-13 | 1983-12-13 | 1984-06-13 | $7700.00 | Window Closed / Lapsed |