Semiconductor device with multi-level metalization and method of making the same

Abstract

Abstract A semiconductor body has thereon a first level metalization pattern, a layer of an electrical insulating material on the body and covering the first level metalization pattern, and a second level metalization pattern on the insulating material layer and extending through at least one opening in the insulating material layer to contact the first level metalization pattern. Each of the metalization patterns includes a film of titanium, a film of platinum over the titanium film and a film of gold over the platinum film. The first level metalization pattern has an opening in the gold film in alignment with each of the openings in the dielectric layer so that the titanium film of the second level metalization pattern contacts the platinum film of the first level metalization pattern.

Inventors

• 👤 William John Greig
• 👤 Ralph Robert Soden

Bibliographic Details