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US3668095A
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Method of manufacturing a metallic oxide film on a substrate
Assignee: Hitachi Ltd
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Filing: 1970-03-26
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Granted: 1972-06-06
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Expires: 1990-03-26
Abstract
Abstract A method for manufacturing a thin, highly pure metallic oxide film by the use of glow discharge on a substrate including the steps of preparing a mixture gas of oxygen and a metallic halide with controlled pressure in an evacuated chamber into which a substrate is placed, applying a high alternating electrical field of a frequency higher than 1 KHz to the chamber to produce the glow discharge adjacent to the substrate, thereby causing the required chemical reaction for the formation of the metallic oxide.
Inventors
- 👤 Hisao Katto
- 👤 Kazunari Kobayashi
- 👤 Yasushi Koga
- 👤 Machiko Koyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 20:23
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/505; C23C16/507; H; H10; H10W; H10W74/00; H10W74/40; H10W74/43
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
152 words
A method for manufacturing a metallic oxide film on a substrate comprising the steps of: a. preparing a mixture gas of oxygen and metallic halide gas in an evacuated chamber, with a desired controlled pressure and in the presence of a substrate whose surface is to be covered by said metallic oxide film; b. applying a high a. c. electrical field of a frequency higher than 1 KHz to said chamber in a predetermined period to produce a glow discharge of said mixture gas adjacent to said substrate with said substrate at a temperature below the melting point thereof, thereby causing the required chemical reaction for the formation of said metallic oxide film thereon; and c. after the formation of the metallic oxide film thereon, heating the substrate to a desired temperature lower than the crystalizing temperature of said metallic oxide to stabilize an electrical property of the deposited metallic oxide film.
Claim 2
Dependent Claim
32 words
A method according to claim 1, wherein in the step of applying the high a.c. electric field to said chamber, said substrate is heated at a desired temperature higher than 500* C.
Claim 3
Independent Claim
160 words
A method of manufacturing a metallic oxide film on a substrate comprising the steps of: a. preparing a mixture gas of oxygen and metallic halide gas in an evacuated chamber, with a desired controlled pressure and in the presence of a substrate whose surface is to be covered by said metallic oxide film; b. heating the substrate at first to a temperature higher than 500* C. but lower than its melting point; c. applying a high a. c. electrical field of a frequency higher than 1 KHz to said chamber in a predetermined period to produce a glow discharge of said mixture gas adjacent to said substrate heated at said first temperature, thereby causing the required chemical reaction for formation of said metallic oxide film thereon; and d. after the formation of the metallic oxide film thereon, heating the substrate to a second temperature higher than said first temperature to stabilize an electrical property of the deposited metallic oxide film.
Claim 4
Dependent Claim
24 words
A method according to claim 1, wherein said glow discharge is carried out in a mixture gas of oxygen, nitrogen and metallic halide gas.
Claim 5
Independent Claim
123 words
A method of manufacturing a metallic oxide film on a substrate comprising the steps of: a. preparing a mixture gas of oxygen at 0.7 to 5 Torr and metallic halide gas at 0.05 to 2 Torr in an evacuated chamber, in the presence of a substrate whose surface is to be covered by said metallic oxide film; and b. applying a high a. c. electrical field of a frequency higher than 1 KHz to said chamber in a predetermined period to produce a glow discharge adjacent to said substrate while maintaining said substrate at a temperature of from about 100* C. to a temperature less than its melting point, thereby causing the required chemical reaction for formation of said metallic oxide film thereon.
Claim 6
Independent Claim
131 words
A method for manufacturing an aluminum oxide film on a substrate comprising the steps of: a. preparing a mixture gas of oxygen and aluminum halide in an evacuated chamber, with a desired controlled pressure and in the presence of a substrate therein; b. applying a high a. c. electrical field of a frequency higher than 1 KHz to said chamber to produce a glow discharge adjacent to said substrate with said substrate maintained at a predetermined temperature less than its melting point, thereby causing the required chemical reaction for the formation of said aluminum oxide film thereon; and c. after the formation of the aluminum oxide film thereon, heating the substrate to a desired temperature lower than 800* C. to stabilize an electrical property of the deposited aluminum oxide film thereon.
Claim 7
Dependent Claim
36 words
A method according to claim 7, wherein in the step of applying the a.c. electrical field of high frequency to said chamber, said substrate placeD on therein is heated to a temperature higher than 500* C.
Claim 8
Independent Claim
130 words
A method for manufacturing an aluminum oxide on a semiconductor substrate comprising the steps of: a. preparing a mixture gas of oxygen at 0.7 to 5 Torr and aluminum halide at 0.05 to 2 Torr within an evacuated chamber, in the presence of a substrate whose surface is to be covered by said metallic oxide film; b. heating said semiconductor substrate at a temperature higher than 500* C.; and c. applying a high a. c. electrical field of a frequency higher than 1 KHz to said chamber over a predetermined period to produce a glow discharge adjacent to said substrate with the substrate at a predetermined temperature less than the melting point of the substrate, thereby causing the required chemical reaction for the formation of said aluminum oxide film thereon.
Claim 9
Dependent Claim
22 words
A method according to claim 1, wherein said predetermined temperature is within a range of about 100* C. to about 1,000* C.
Claim 10
Dependent Claim
20 words
A method according to claim 2, wherein said substrate is maintained at a temperature below 1,000* C. during step (b).
Claim 11
Dependent Claim
26 words
A method according to claim 4, wherein the substrate is heated during step (b) to a temperature higher than 500* C. but lower than 1,000* C.
Claim 12
Dependent Claim
20 words
A method according to claim 6, wherein said substrate is maintained during step (b) at a temperature below 1,000* C.
Claim 13
Dependent Claim
19 words
A method according to claim 7, wherein said predetermined temperature is between about 100* C. and about 1,000* C.
Claim 14
Dependent Claim
24 words
A method according to claim 9, wherein said substrate is heated to a temperature between about 100* C. and 1,000* C. during step (c).
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-06-06 | 1975-12-06 | 1976-06-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-06-06 | 1979-12-06 | 1980-06-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-06-06 | 1983-12-06 | 1984-06-06 | $7700.00 | Window Closed / Lapsed |