Semiconductive device for and method of manufacturing the same
Abstract
Abstract THIS SPECIFICATION DISCLOSES A SEMICONDUCTOR DEVICE COMPRISING A SILCON SUBSTRATE, AN INSULATING FILM CONTAINING SILCON OXIDE AND PHOSPHOURS OXIDE WHICH IS FORMED ON THE SURFACE OF SAID SILCON SUBSTRTE, AND A PROTECTIVE COATING CONTAINING ALUMINUM OXIDE WHICH IS FORMED ON THE INSULATING FILM. IN THE SEMICONDUCTOR DEVICE OF THIS INVENTION, SAID PROTECTIVE COATING CONTAINING ALUMINUM OXIDE SERVES TO PREVENT SAID INSULATING FILM CONTAINING SILICON OXIDE AND PHOSPHORUS OXIDE FROM REACTING WITH ANY MOISTURE IN THE EXTERNAL ATMOSPHERE, THEREBY IMPROVING THE WATER RESISTING PROPERTY OF THE SEMICONDUCTOR DEVICE AND STABILISING THE SEMICONDUCTOR SURFACE CHARACTERISTICS OF THE LATTER.
Inventors
- 👤 Masayuki Yamamoto
- 👤 Hisashi Toki
- 👤 Hideo Shibuya
Bibliographic Details
Claims Analysis
Total Claims: 0References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-06-06 | 1975-12-06 | 1976-06-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-06-06 | 1979-12-06 | 1980-06-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-06-06 | 1983-12-06 | 1984-06-06 | $7700.00 | Window Closed / Lapsed |