Patent US3665307A successfully refreshed from Google Patents.
US3665307A
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US
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Method and apparatus for detecting surface ions on silicon diodes and transistors
Assignee: National Aeronautics and Space Administration
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Filing: 1970-06-05
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Granted: 1972-05-23
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Expires: 1990-06-05
Abstract
Abstract A method and apparatus for detecting surface ions on silicon diodes and transistors is disclosed. The apparatus disclosed comprises a temperature chamber for housing the diode or transistor under test, a power supply, an ammeter and an X-Y recorder. The semiconductor under test is subjected to various low temperatures and the reverse current-voltage characteristic curves of the semiconductor are plotted at each of the temperatures. From the reverse I-V characteristic curves, the presence of surface ions can be detected.
Inventors
- 👤 Frank J Cocca
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 09:31
CPC Classifications
G; G01; G01R; G01R31/00; G01R31/26; G01R31/2607; G01R31/2637
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
169 words
An apparatus for detecting surface ions on P-N planar junction devices comprising: a. temperature control chamber means for housing said junction device and for maintaining the ambient temperature of said junction device at a selected discrete temperature in the range of -25* to -75* C., said temperature control means being adaptable to adjust and maintain the ambient temperature of said junction device at different discrete temperatures in said range; b. means for applying and varying reverse bias voltages in the range of 0 to 100 volts d.c. to the junction device while said device is maintained at a discrete temperature; c. current sensing means electrically connected to the junction device for quantitatively indicating current flowing through said junction device; and d. means electrically connected to said bias voltage means and to said current sensing means for plotting a current-versusvoltage characteristic curve of the junction device for increasing and decreasing bias voltage while said device is maintained at each said discrete temperature whereby currentversus-voltage characteristic curves indicating hysteresis are obtainable.
Claim 2
Independent Claim
169 words
An apparatus for detecting surface ions on P-N planar junction devices comprising: a. temperature control chamber means for housing said junction device and for maintaining the ambient temperature of said junction device at a selected discrete temperature in the range of -25* to -75* C., said temperature control means being adaptable to adjust and maintain the ambient temperature of said junction device at different discrete temperatures in said range; b. means for applying and varying reverse bias voltages in the range of 0 to 100 volts d.c. to the junction device while said device is maintained at a discrete temperature; c. current sensing means electrically connected to the junction device for quantitatively indicating current flowing through said junction device; and d. means electrically connected to said bias voltage means and to said current sensing means for plotting a current-versusvoltage characteristic curve of the junction device for increasing and decreasing bias voltage while said device is maintained at each said discrete temperature whereby currentversus-voltage characteristic curves indicating hysteresis are obtainable.
Claim 3
Independent Claim
110 words
A method for detecting surface ions on P-N junction planar devices comprising the steps of: a. maintaining said junction device at a selected discrete temperature in the approximate range of -25* to -75* C.; b. applying a reverse bias voltage to said junction device; c. varying said bias voltage over the approximate range of 0 to 100 volts d.c. in both increasing and decreasing directions to thereby obtain a hysteresis curve; d. plotting a current-versus-voltage characteristic hysteresis curve for each discrete temperature selected; and e. examining the characteristic hysteresis curves of the junction device to detect differences in the hysteresis effects demonstrated therein as indicating the presence of surface ions.
Claim 4
Independent Claim
110 words
A method for detecting surface ions on P-N junction planar devices comprising the steps of: a. maintaining said junction device at a selected discrete temperature in the approximate range of -25* to -75* C.; b. applying a reverse bias voltage to said junction device; c. varying said bias voltage over the approximate range of 0 to 100 volts d.c. in both increasing and decreasing directions to thereby obtain a hysteresis curve; d. plotting a current-versus-voltage characteristic hysteresis curve for each discrete temperature selected; and e. examining the characteristic hysteresis curves of the junction device to detect differences in the hysteresis effects demonstrated therein as indicating the presence of surface ions.
Claim 5
Dependent Claim
36 words
A method as recited in claim 2 further including repeating each of the steps therein for different discrete temperatures of said junction device within said temperature range to thereby obtain a family of current-versus-voltage characteristic curves.
Claim 6
Independent Claim
165 words
A method for detecting surface ions on a P-N junction planar device comprising the steps of: a. maintaining said junction device at a selected discrete temperature in the approximate temperature range of -25* to -75* C.; b. applying a reverse bias d.c. voltage to said junction device; c. ploTting a reverse bias, current-versus-voltage characteristic curve of the junction device at said discrete temperature while varying said reverse bias voltage within an approximate range of 0 to 100 volts d.c. in a manner whereby a current-versus-voltage characteristic curve indicating hysteresis is obtainable; d. repeating each of the steps above for different discrete temperatures of said junction device within said temperature range to thereby obtain a family of current-versus-voltage characteristic curves; and e. detecting a counter-clockwise hysteresis effect in said curves or detecting an increase in bias voltage for a lower one of said discrete temperatures in order to maintain a constant leakage current as being indicative of the presence of surface ions on said junction device.
Claim 7
Independent Claim
165 words
A method for detecting surface ions on a P-N junction planar device comprising the steps of: a. maintaining said junction device at a selected discrete temperature in the approximate temperature range of -25* to -75* C.; b. applying a reverse bias d.c. voltage to said junction device; c. ploTting a reverse bias, current-versus-voltage characteristic curve of the junction device at said discrete temperature while varying said reverse bias voltage within an approximate range of 0 to 100 volts d.c. in a manner whereby a current-versus-voltage characteristic curve indicating hysteresis is obtainable; d. repeating each of the steps above for different discrete temperatures of said junction device within said temperature range to thereby obtain a family of current-versus-voltage characteristic curves; and e. detecting a counter-clockwise hysteresis effect in said curves or detecting an increase in bias voltage for a lower one of said discrete temperatures in order to maintain a constant leakage current as being indicative of the presence of surface ions on said junction device.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-05-23 | 1975-11-22 | 1976-05-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-05-23 | 1979-11-22 | 1980-05-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-05-23 | 1983-11-22 | 1984-05-23 | $7700.00 | Window Closed / Lapsed |