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Patent US3665262A successfully refreshed from Google Patents.
US3665262A
Expired / Lapsed
US
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Semiconductor pressure-electric transducer including a semiconductor element having a deep level impurity and a semiconductor pressure transmitting plate
Assignee: Panasonic Holdings Corp
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Filing: 1969-07-14
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Granted: 1972-05-23
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Expires: 1989-07-14
Abstract
Abstract In a semiconductor pressure-electric transducer comprising a semiconductor element which contains a deep level impurity and whose electric resistance varies with a pressure applied thereto, a structure of the plate for transmitting a pressure applied to said transducer to said semiconductor element.
Inventors
- 👤 Akio Yamashita
- 👤 Tadashi Yamada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 07:44
CPC Classifications
H; H10; H10D; H10D48/00; H10D48/50
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
94 words
A pressure-electric transducer comprising a semiconductor element which contains an impurity producing (a) deep energy levels and the electric resistance of which varies with a pressure applied thereto, an electrode in rectifying contact with said element, and a semiconductor plate provided on said electrode for transmitting a pressure applied to said transducer, said semiconductor plate having a hardness nearly equal to that of said semiconductor element and having a contact rectifying characteristic with respect to said electrode which is in the same direction as that of said electrode to said pressure sensitive semiconductor element.
Claim 2
Dependent Claim
94 words
A pressure-electric transducer comprising a semiconductor element which contains an impurity producing (a) deep energy levels and the electric resistance of which varies with a pressure applied thereto, an electrode in rectifying contact with said element, and a semiconductor plate provided on said electrode for transmitting a pressure applied to said transducer, said semiconductor plate having a hardness nearly equal to that of said semiconductor element and having a contact rectifying characteristic with respect to said electrode which is in the same direction as that of said electrode to said pressure sensitive semiconductor element.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-05-23 | 1975-11-22 | 1976-05-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-05-23 | 1979-11-22 | 1980-05-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-05-23 | 1983-11-22 | 1984-05-23 | $7700.00 | Window Closed / Lapsed |