Patent US3663872A successfully refreshed from Google Patents.
US3663872A
Expired / Lapsed
US
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Integrated circuit lateral transistor
Assignee: NEC Corp
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Filing: 1970-01-19
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Granted: 1972-05-16
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Expires: 1990-01-19
Abstract
Abstract A lateral transistor serving as a minority transistor in an integrated circuit has a region buried in the base region and having an opposite conduction type to the base region.
Inventors
- 👤 Takayuki Yanagawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 10:01
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/60; H10D99/00; Y; Y10; Y10S; Y10S148/00; Y10S148/037; Y10S148/049; Y10S148/085; Y10S148/096; Y10S148/151
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
130 words
A lateral transistor comprising a semiconductor substrate of a first conductivity type, a base region of a second conductivity type opposite to that of said first conductivity type, said base region comprising a low-resistivity region formed in a surface portion of said substrate and a high-resistivity layer formed on said substrate, a buried region of said first conductivity type formed at the interface of said first low-resistivity region and said high-resistivity layer, whereby said buried region is completely surrounded by said base region, emitter and collector regions of said first conductivity type formed in the surface of said base region and overlying but isolated from said buried region, a single base electrode coupled to said base region, and emitter and collector electrodes coupled respectively to said emitter and collector regions.
Claim 2
Dependent Claim
130 words
A lateral transistor comprising a semiconductor substrate of a first conductivity type, a base region of a second conductivity type opposite to that of said first conductivity type, said base region comprising a low-resistivity region formed in a surface portion of said substrate and a high-resistivity layer formed on said substrate, a buried region of said first conductivity type formed at the interface of said first low-resistivity region and said high-resistivity layer, whereby said buried region is completely surrounded by said base region, emitter and collector regions of said first conductivity type formed in the surface of said base region and overlying but isolated from said buried region, a single base electrode coupled to said base region, and emitter and collector electrodes coupled respectively to said emitter and collector regions.
Claim 3
Dependent Claim
27 words
The transistor of claim 1, in which the ends of said buried region are in approximate alignment with the ends of said emitter and collector regions respectively.
Claim 4
Dependent Claim
25 words
The transistor of claim 2, further comprising a low-resistivity region of said second conductivity type formed in said base region and surrounding said emitter region.
Claim 5
Dependent Claim
25 words
The transistor of claim 1, further comprising a low-resistivity region of said second conductivity type formed in said base region and surrounding said emitter region.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-05-16 | 1975-11-15 | 1976-05-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-05-16 | 1979-11-15 | 1980-05-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-05-16 | 1983-11-15 | 1984-05-16 | $7700.00 | Window Closed / Lapsed |