Bipolar-unipolar transistor structure

Claim 1

A bipolar-unipolar transistor structure comprising a body of semiconductive material having a collector region of one conductivity type intersecting a surface of said wafer, a base region of the other conductivity type diffused into said collector region and intersecting said surface, an emitter region of the same conductivity type as said collector diffused into said base region and intersecting said surface such that the P-N junctions between said emitteR and base regions and between said base and collector regions extend to said surface, electrical contacts engaged with said emitter, base and collector regions, an oxide layer covering said surface of the wafer not covered by said contacts, a layer of semiconductive material deposited on said oxide layer, said layer of semiconductive material spanning at least one of said P-N junctions and being formed from a material productive of electron-hole pairs upon exposure to radiation, and an electrode connected to said layer of semiconductive material, the electrodes connected to said layer of semiconductive material, said base region and said emitter region comprising the gate, drain and source electrodes of a unipolar transistor, the transistor formed in said wafer being responsive to incident radiation upon the layer of semiconductive material on said oxide layer.