Patent US3663408A successfully refreshed from Google Patents.
US3663408A
Expired / Lapsed
US
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Method of producing tantalum nitride film resistors
Assignee: Oki Electric Industry Co Ltd
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Filing: 1969-07-22
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Granted: 1972-05-16
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Expires: 1989-07-22
Abstract
Abstract THIS INVENTION IS TO CONDUCT REACTIVE SPUTTERING BY HEATING A SUBSTRATE TO A TEMPERATURE OF 300 TO 553*C. WHILE KEEPING THE PARTIAL PRESSURE OF NITROGEN AT 3X10**5 TO 2X10**4 TORR IN A HIGH VACUUM OF LESS THAN 5X10**3 TORR OF THE MIXED PRESSURE OF ARGON AND NITROGEN SO THAT A TANTALUM NITRIDE FILM RESISTOR IN WHICH THE TEMPERATURE COEFFICIENT BECOMES ZERO IN THE PLATEAU OF CHARACTERISTICS MAY BE OBTAINED.
Inventors
- 👤 Shun Kumagai
- 👤 Toshiaki Koikeda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 13:43
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/0021; C23C14/0036; H; H01; H01J; H01J37/00; H01J37/32; H01J37/34
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-05-16 | 1975-11-15 | 1976-05-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-05-16 | 1979-11-15 | 1980-05-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-05-16 | 1983-11-15 | 1984-05-16 | $7700.00 | Window Closed / Lapsed |