Patent US3663321A successfully refreshed from Google Patents.
US3663321A
Expired / Lapsed
US
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Alloy diode characteristics control method
Assignee: Optron Inc
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Filing: 1969-11-14
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Granted: 1972-05-16
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Expires: 1989-11-14
Abstract
Abstract A method for controlling the electrical characteristics of alloy diodes by subjecting the diode to a series of at least two carefully controlled reheat steps in order to result in predictable electrical characteristics for the diode. The first heat step involves heating the diode, after the PN junction has been formed and the device has been brought to room temperature, to a predetermined temperature of from 800* C. to 1,100* C. for from 15 seconds to 1 hour; thereafter and while the device is still at the predetermined temperature, the temperature is varied one or more times by a predetermined amount Delta T. Delta T is in the range from 1/4 * C. to 30* C.
Inventors
- 👤 King Lau Hu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 12:43
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/50; H10D; H10D99/00
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
62 words
A method for improving the electrical characteristics of a PN alloy junction diode as recited in claim 1, wherein: a. said first predetermined temperature is in the range of 800* C. to 1,100* C.; and b. the difference between said first and second temperatures is in the range from about + or - 1/4 * to about + or - 30* C.
Claim 2
Dependent Claim
47 words
A method for improving the electrical characteristics of a PN alloy junction diode as recited in claim 2, wherein: a. said first predetermined time is in the range from about 15 seconds to 1 hour; and b. said second predetermined time is less than about 3 minutes.
Claim 3
Dependent Claim
52 words
A method for improving the electrical characteristics of a PN alloy junction diode as recited in claim 3, wherein said cooling of said diode is done at a rate exceeding 100* C. per second until the temperature of said diode is less than the eutectic temperature of the alloy of said diode.
Claim 4
Dependent Claim
52 words
A method for improving the electrical characteristics of a PN alloy junction diode as recited in claim 1, wherein said cooling of said diode is done at a rate exceeding 100* C. per second until the temperature of said diode is less than the eutectic temperature of the alloy of said diode.
Claim 5
Dependent Claim
62 words
A method for improving the electrical characteristics of a PN alloy junction diode as recited in claim 1 and further including the steps of: a. changing the temperature of said diode to a third predetermined temperature after said second period of time; and b. maintaining said third predetermined temperature for a third predetermined period of time before said cooling of said diode.
Claim 6
Dependent Claim
71 words
A method for improving the electrical characteristics of a PN alloy junction diode as recited in claim 6, wherein: a. said first predetermined temperature is in the range of about 800* to 1,100* C.; and b. the difference between said first temperature and said second temperature and between said second temperature and said third temperature is in the range of about + or - 1/4 * to + or -30* C.
Claim 7
Dependent Claim
49 words
A method for improving the electrical characteristics of a PN alloy junction diode as recited in claim 7, wherein: a. said first predetermined time is in the range from about 15 seconds to 1 hour; and b. said second and third predetermined times are less than about 3 minutes.
Claim 8
Dependent Claim
52 words
A method for improving the electrical characteristics of a PN alloy junction diode as recited in claim 8, wherein said cooling of said diode is done at a rate exceeding 100* C. per second until the temperature of said diode is less than the eutectic temperature of the alloy of said diode.
Claim 9
Dependent Claim
62 words
A method for improving the electrical characteristics of a PN alloy junction diode as recited in claim 6 and further including the steps of: a. changing the temperature of said diode to a fourth predetermined temperature after said third period of time; and b. maintaining said fourth predetermined temperature for a fourth predetermined period of time before said cooling of said diode.
Claim 10
Dependent Claim
56 words
A method for iMproving the electrical characteristics of a PN alloy junction diode as recited in claim 10, wherein said predetermined temperatures are all in the range of about 800* to 1,100* C. and said temperature changes are all in the range of from about + or - 1/4 * to + or - 30* C.
Claim 11
Dependent Claim
49 words
A method for improving the electrical characteristics of a PN alloy junction diode as recited in claim 11, wherein said first period of time is in the range of about 15 seconds to 1 hour and all other of said periods of time are less than about 3 minutes.
Claim 12
Dependent Claim
52 words
A method for improving the electrical characteristics of a PN alloy junction diode as recited in claim 11, wherein said cooling of said diode is done at a rate exceeding 100* C. per second until the temperature of said diode is less than the eutectic temperature of the alloy of said diode.
Claim 13
Independent Claim
96 words
A method for improving the electrical characteristics of a PN alloy junction diode by subjecting said diode to a minimum of two heating steps including the steps of: a. heating said PN alloy diode to a first temperature between about 800* C. and 1,100* C.; b. subjecting said diode to a plurality of predetermined temperatures, said temperatures being different from said first temperature; and c. cooling said diode to a temperature below the eutectic temperature of the alloy of said diode, said predetermined temperatures all being above the eutectic temperature of the alloy of said diode.
Claim 14
Dependent Claim
44 words
A method for improving the electrical characteristics of a PN alloy junction diode as recited in claim 1, wherein said heating is done in a gaseous atmosphere and said temperature change is made by altering the flow rate of said gas over said diode.
Claim 15
Independent Claim
98 words
A method for improving the electrical characteristics of a PN alloy junction diode by subjecting said diode to a minimum of two heating steps including the steps of: a. heating said PN alloy diode to a first temperature between about 800* C. and 1,100* C.; b. by changing the temperature of said diode at a predetermined rate for a predetermined period of time from said first temperature to a temperature above the eutectic temperature of the alloy of said diode; and c. cooling said diode to a temperature below the eutectic temperature of the alloy of said diode.
References Cited (Backward Citations)
US3464867A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-05-16 | 1975-11-15 | 1976-05-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-05-16 | 1979-11-15 | 1980-05-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-05-16 | 1983-11-15 | 1984-05-16 | $7700.00 | Window Closed / Lapsed |