Patent US3659339A successfully refreshed from Google Patents.
US3659339A
Expired / Lapsed
US
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Method of making a film resistor
Assignee: Hitachi Ltd
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Filing: 1969-09-24
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Granted: 1972-05-02
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Expires: 1989-09-24
Abstract
Abstract A method of making a resistor comprising the steps of depositing resistor materials onto a substrate in the form of a film and connecting conductors to the two ends thereof, wherein the said resistor film is formed so that it includes a first part where the current path between the said conductors is long and a second part where the current path is short, and first and second ditches are provided in the said first and second parts of the resistor film in a direction crossing the direction of the current so as to adjust the resistance between the said two conductors to the desired values.
Inventors
- 👤 Isao Yamaguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 16:44
CPC Classifications
H; H01; H01C; H01C17/00; H01C17/06; H01C17/07; H01C17/22; H01C17/24; H01C17/245; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49082; Y10T29/49099
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
99 words
A method of making a film resistor comprising the steps of preparing a support substrate including an insulating principal surface, a pair of electrode conductors provided on said principal surface and a resistive film which bridges said pair of electrode conductors and includes a first resistance path and a second resistance path having a larger resistance than that of said first path; and adjusting the value of resistance of said resistive film between said pair of electrode conductors to a desired value by eliminating at least a part of at least one of said first and second resistance paths.
Claim 2
Independent Claim
99 words
A method of making a film resistor comprising the steps of preparing a support substrate including an insulating principal surface, a pair of electrode conductors provided on said principal surface and a resistive film which bridges said pair of electrode conductors and includes a first resistance path and a second resistance path having a larger resistance than that of said first path; and adjusting the value of resistance of said resistive film between said pair of electrode conductors to a desired value by eliminating at least a part of at least one of said first and second resistance paths.
Claim 3
Dependent Claim
40 words
A method according to claim 1, wherein said value of resistance is finely readjusted by eliminating a part of said second resistance path after the value of resistance is roughly adjusted by eliminating a part of said first resistance path.
Claim 4
Independent Claim
117 words
A method of making a film resistor comprising the steps of preparing a support substrate having an insulating principal surface, forming on said principal surface a polygonal resistive film region having two sides different in length and first and second peripheral parts sandwiched by said two sides, setting first and second electrodes to each of said first and second peripheral parts, forming a first ditch going into said resistive film region from the shorter one of said sides to adjust the value of resistance between said two electrodes, and forming a second ditch extending into said resistive film region from the longer side facing said shorter side to readjust the value of resistance between said two electrodes.
Claim 5
Independent Claim
117 words
A method of making a film resistor comprising the steps of preparing a support substrate having an insulating principal surface, forming on said principal surface a polygonal resistive film region having two sides different in length and first and second peripheral parts sandwiched by said two sides, setting first and second electrodes to each of said first and second peripheral parts, forming a first ditch going into said resistive film region from the shorter one of said sides to adjust the value of resistance between said two electrodes, and forming a second ditch extending into said resistive film region from the longer side facing said shorter side to readjust the value of resistance between said two electrodes.
Claim 6
Independent Claim
76 words
A method of making a film resistor comprising the steps of preparing a support substrate having an insulating principal surface, forming a trapezoidal resistive film region on said principal surface, setting first and second electrodes on the two sides opposing in unparallel relation, and forming a ditch into said resistive film region from at least one of the two parallelly opposing sides of said resistive film region thereby to adjust the value of the inter-electrode resistance.
Claim 7
Independent Claim
76 words
A method of making a film resistor comprising the steps of preparing a support substrate having an insulating principal surface, forming a trapezoidal resistive film region on said principal surface, setting first and second electrodes on the two sides opposing in unparallel relation, and forming a ditch into said resistive film region from at least one of the two parallelly opposing sides of said resistive film region thereby to adjust the value of the inter-electrode resistance.
Claim 8
Dependent Claim
56 words
A method according to Claim 4, wherein said inter-electrode resistance is readjusted by forming a second ditch into said resistive film region from the longer one of the two parallel sides after said inter-electrode resistance is roughly adjusted by forming a first ditch into said resistive film region from the shorter side opposing said longer side.
Claim 9
Dependent Claim
45 words
A method according to claim 5, wherein the angle between the edge of said resistive film extending from said shorter side to said longer side and an edge of said film adjacent to said shorter side lies in the range of about 110* to 160*.
Claim 10
Independent Claim
95 words
A method of making a film resistor comprising the steps of: preparing a support substrate having an insulating principal surface; forming a resistive film region on said principal surface having a first set of two parallel sides; setting first and second electrodes on the two sides opposing in parallel relationship; and forming a ditch into said resistive film region from at least one of two additional parallel opposing sides of said resistive film region which are inclined with respect to said first set of parallel sides, whereby the value of the inter-electrode resistance is adjusted.
Claim 11
Independent Claim
95 words
A method of making a film resistor comprising the steps of: preparing a support substrate having an insulating principal surface; forming a resistive film region on said principal surface having a first set of two parallel sides; setting first and second electrodes on the two sides opposing in parallel relationship; and forming a ditch into said resistive film region from at least one of two additional parallel opposing sides of said resistive film region which are inclined with respect to said first set of parallel sides, whereby the value of the inter-electrode resistance is adjusted.
Claim 12
Dependent Claim
26 words
A method according to claim 7, wherein said resistive region includes an area of low resistivity disposed between said first set of two inclined parallel sides.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-05-02 | 1975-11-01 | 1976-05-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-05-02 | 1979-11-01 | 1980-05-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-05-02 | 1983-11-01 | 1984-05-02 | $7700.00 | Window Closed / Lapsed |