Patent US1243232A successfully refreshed from Google Patents.
Patent US4144046A successfully refreshed from Google Patents.
Patent US3775601A successfully refreshed from Google Patents.
Patent US3655439A successfully refreshed from Google Patents.
US3655439A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing thin layer components with at least one insulating intermediate layer
Assignee: Siemens AG
•
Filing: 1969-06-16
•
Granted: 1972-04-11
•
Expires: 1989-06-16
Abstract
Abstract Described is a method of producing thin layer components, separated by at least one insulating layer and comprised of semiconductor material, particularly silicon. The method is characterized by the fact that an amorphous layer of insulated material is pyrolytically precipitated on a substrate wafer, comprised of monocrystalline semiconductor material. The amorphous layer is converted into a monocrystalline layer by using the monocrystalline substrate and the thus formed substrate, which has a homogeneous crystallographic orientation, is used to grow another epitactic semiconductor layer, preferably of silicon.
Inventors
- 👤 Hartmut Seiter
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 05:07
CPC Classifications
C; C30; C30B; C30B1/00; C30B1/02; C30B1/026; C30B25/00; C30B25/02; C30B25/18; C30B25/22; H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/65; H10P14/6516; H10P14/6544; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391; H10P14/69394; H10P14/69397; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/018; H10W10/10; H10W74/00; H10W74/40; H10W74/43; Y; Y10; Y10S; Y10S117/00; Y10S117/901; Y10S117/902; Y10S148/00; Y10S148/043; Y10S148/085; Y10S148/115; Y10S148/122; Y10S148/15; Y10S438/00; Y10S438/967
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
37 words
The method of claim 1, wherein a carrier gas is charged, at 100* to 300* C with the organometallic compound and the organometallic compound is thereafter dissociated, at 500* to 600* C at the hot silicon substrate.
Claim 2
Dependent Claim
26 words
The method of claim 1, wherein the recrystallization of the amorphous layer is effected at a temperature below 950* C, by a 4 hour tempering process.
Claim 3
Dependent Claim
16 words
The method of claim 1, wherein the substrate body and the epitactic layers are of silicon.
Claim 4
Dependent Claim
31 words
The method of claim 1, wherein several layers are superimposed in the same sequence and are locally removed with the aid of masking layers in order to produce special geometrical structures.
Claim 5
Dependent Claim
11 words
The method of claim 1, wherein the substrate has (100) orientation.
Claim 6
Dependent Claim
15 words
The method of claim 1, wherein the base substrate is a silicon crystal with (211)-orientation.
Claim 7
Dependent Claim
17 words
The method of claim 1, wherein the silicon body is etched prior to precipitating the amorphous layer.
Claim 8
Dependent Claim
27 words
The method of claim 8, wherein the substance which crystallizes according to the spinel structure is applied in a layer thickness of 0.1 to 1 Mu .
Claim 9
Dependent Claim
22 words
The method of claim 9, wherein a spinel of an MgO:Al2O3 1: 1 to 1:4 composition is produced as the insulating layer.
Claim 10
Dependent Claim
20 words
The method of claim 9, wherein a spinel of ZnO:Al2O3 1:1 to 1:4 composition is produced as the insulating layer.
Claim 11
Dependent Claim
18 words
The method of claim 11, wherein 0.1 percent TiO2 is evaporated during the precipitation of the amorphous layer.
Claim 12
Dependent Claim
11 words
The method of claim 12, wherein tetra ethoxytitanium Ti(OC2H5)4, is used.
Claim 13
Dependent Claim
22 words
The method of claim 12 wherein a compound selected from aluminum-isopropylate Al((CH3)2CHO)3 and secondary aluminumbutylate Al(CH3CH2CH)CH3)O)3 is used as the aluminum-containing component.
Claim 14
Dependent Claim
14 words
The method of claim 12, wherein magnesium acetyl-acetonate is used as the magnesium-containing component.
Claim 15
Dependent Claim
18 words
The method of claim 12, wherein aluminum-magnesium-ethylate Mg(Al(OC2H5)4)2 is used as the material for forming the insulating layer.
Claim 16
Dependent Claim
17 words
The method of claim 10, wherein zinc acetyl acetonate (Zn(CH3COCH=C(CH3)O)2 is used as the zinc containing component.
Claim 17
Independent Claim
144 words
The method of producing a plurality of silicon semiconductor thin layer components where the individual semiconductor regions are separated by at least one insulating layer, crystallized according to the spinel type which comprises forming a masking layer on a semiconductor layer, producing tub-shaped depressions on the substrate wafer of monocrystalline semiconductor material by said masking layer and the photo varnish technique, removing the masking layer, precipitating an amorphous spinel insulating layer upon the substrate heated to 500* to 600* C, by pyrolysis of an organometallic compound, said spinel being selected from magnesium aluminum and zinc aluminum spinels, subsequently using the monocrystalline semiconductor substrate as a seed to convert said amorphous spinel layer into a monocrystalline spinel layer by tempering for several hours at a temperature below 950* C and epitactically precipitating another semiconductor layer upon said monocrystalline spinel insulating layer in uniform crystallographic orientation.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-04-11 | 1975-10-11 | 1976-04-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-04-11 | 1979-10-11 | 1980-04-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-04-11 | 1983-10-11 | 1984-04-11 | $7700.00 | Window Closed / Lapsed |