Patent US3649837A successfully refreshed from Google Patents.
US3649837A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Diffractive image-forming means integrated into semiconducting devices
Assignee: Individual
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Filing: 1970-04-27
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Granted: 1972-03-14
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Expires: 1990-04-27
Abstract
Abstract Integrated electro-optical structures are disclosed which comprise a diffractive image-forming means on a transparent semiconductive body in optical alignment with a photoelectric element on said body. In particular, image-forming means and photoelectrical element are located at the same surface of said body and radiation passes between them by reflection on the opposite surface of the body. This arrangement permits extensive electric integration of conducting portions of image-forming means with a photoelectric device.
Inventors
- 👤 Kurt Lehovec
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 06:16
CPC Classifications
H; H10; H10F; H10F99/00; G; G03; G03F; G03F7/00; G03F7/70; G03F7/70383; H10D; H10D99/00; H10F39/00; H10F39/10; H10F39/103; H10F55/00; H10H; H10H20/00; H10H20/80
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
61 words
An integrated electrooptical structure comprising a semiconducting body, a photoelectric device active for radiation to which said body is substantially transparent, and a diffractive image-forming means, both located at the same first surface of said body and arranged to focus said radiation with respect to said device after reflection at a second surface of said body opposite to said first surface.
Claim 2
Dependent Claim
61 words
An integrated electrooptical structure comprising a semiconducting body, a photoelectric device active for radiation to which said body is substantially transparent, and a diffractive image-forming means, both located at the same first surface of said body and arranged to focus said radiation with respect to said device after reflection at a second surface of said body opposite to said first surface.
Claim 3
Dependent Claim
25 words
The structure of claim 1 whereby said second surface is coated with a reflective coating dimensioned to reflect selectively at the wavelength of said radiation.
Claim 4
Dependent Claim
24 words
The structure of claim 1 whereby said photoelectric device comprises a heterojunction between said semiconducting body and another semiconducting body of smaller band gap.
Claim 5
Dependent Claim
14 words
The structure of claim 1 whereby said photoelectric device is a light-emitting circuit element.
Claim 6
Dependent Claim
18 words
The structure of claim 1 whereby said photoelectric device is a photocell and comprises a Schottky barrier contact.
Claim 7
Dependent Claim
14 words
The structure of claim 1 whereby said diffractive image-forming means is a zone plate.
Claim 8
Dependent Claim
22 words
The structure of claim 6 whereby a portIon of this zone plate is conducting and is a contact to said photoelectric device.
Claim 9
Dependent Claim
35 words
The structure of claim 7 whereby another portion of said zone plate is also conducting and is a contact to an electric circuit component in said semiconducting body in circuit connection with said photoelectric device.
Claim 10
Dependent Claim
38 words
The structure of claim 8 whereby said photoelectric device is a Schottky barrier contact to the base layer of a bipolar transistor and said electric component is said bipolar transistor amplifying the photocurrent of said Schottky barrier contact.
Claim 11
Dependent Claim
65 words
The structure of claim 8 whereby said photoelectric device is a disk-shaped Schottky barrier contact to a semiconducting body, said disk-shaped contact being the central region of said zone plate, said other portion being an opaque region of said zone plate, and also the gate electrode of a field effect transistor, said field effect transistor electrically connected to amplify the photocurrent of said photoelectric device.
Claim 12
Dependent Claim
52 words
A semiconducting body, a plurality of photoelectric devices on a surface of said body, said photoelectric devices active to radiation to which said body is substantially transparent, a diffractive image-forming means on said body arranged to focus a plurality of beams of said radiation with respect to said plurality of photoelectric devices.
Claim 13
Dependent Claim
52 words
A semiconducting body, a plurality of photoelectric devices on a surface of said body, said photoelectric devices active to radiation to which said body is substantially transparent, a diffractive image-forming means on said body arranged to focus a plurality of beams of said radiation with respect to said plurality of photoelectric devices.
Claim 14
Dependent Claim
43 words
The structure of claim 11 whereby portions of said image-forming means are electric elements of said plurality of photoelectric devices and said focused radiation passing between said image-forming means and said plurality of devices is reflected at the opposite surface of said body.
Claim 15
Dependent Claim
32 words
The structure of claim 11 whereby said photoelectric devices are Schottky barrier photocells, and said image-forming means is a zone plate, comprising conducting opaque regions as Schottky barrier contacts to said photocells.
Claim 16
Dependent Claim
57 words
A semiconducting body, a photoelectric device active for radiation to which said semiconducting body is substantially transparent and located at a first surface of said body, an image-forming means located at a second surface of said body, and focusing said radiation with respect to said photoelectric device, said second surface being substantially orthogonal to said first surface.
Claim 17
Dependent Claim
57 words
A semiconducting body, a photoelectric device active for radiation to which said semiconducting body is substantially transparent and located at a first surface of said body, an image-forming means located at a second surface of said body, and focusing said radiation with respect to said photoelectric device, said second surface being substantially orthogonal to said first surface.
Claim 18
Dependent Claim
26 words
An ovonic switch integrated with a zone plate into a monolithic solid structure whereby part of said zone plate is a contact to said ovonic switch.
Claim 19
Dependent Claim
26 words
An ovonic switch integrated with a zone plate into a monolithic solid structure whereby part of said zone plate is a contact to said ovonic switch.
Claim 20
Dependent Claim
26 words
The structure of claim 15 whereby said zone plate is designed to focus radiation on the channel of said ovonic switch thereby affecting its electrical characteristic.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-03-14 | 1975-09-13 | 1976-03-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-03-14 | 1979-09-13 | 1980-03-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-03-14 | 1983-09-13 | 1984-03-14 | $7700.00 | Window Closed / Lapsed |