Patent FR1248837A successfully refreshed from Google Patents.
Patent US3647663A successfully refreshed from Google Patents.
US3647663A
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Method of forming a composite insulating layer
Assignee: Texas Instruments Inc
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Filing: 1968-01-19
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Granted: 1972-03-07
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Expires: 1988-01-19
Abstract
Abstract DISCLOSED IS A METHOD OF FORMING A COMPOSITE INSULATING LAYER FOR USE, PRIMARILY, IN MULTILEVEL INTEGRATED CIRCUITS. AN RF-SPUTTERED SILICON OXIDE LAYER IS DEPOSITED OVER THE FIRST LAYER CONTACTS OF A MONOCRYSTALLINE INTEGRATED CIRCUILT FOLLOWED BY THE DEPOSITION OF A LAYER OF OXIDATIVE SILICON OXIDE RESULTING FROM A REACTION OF SILANE SIH4 WITH OXYGEN 02 TO FORM A COMPOSITE INSULATING LAYER. THE COMPOSITE INSULATING LAYER COMBINES THE ADVANTAGE OF THE SILICON OXIDE LAYER FORMED BY EITHER METHOD BUT WITH MORE OF THE DISADVANTAGES INHERENT IN EITHER.
Inventors
- 👤 James A Cunningham
- 👤 Clyde R Fuller
- 👤 Samuel J Wood Jr
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 19:04
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/43; H10P; H10P95/00; H10W20/00; H10W20/40
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-03-07 | 1975-09-06 | 1976-03-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-03-07 | 1979-09-06 | 1980-03-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-03-07 | 1983-09-06 | 1984-03-07 | $7700.00 | Window Closed / Lapsed |