Patent US3647579A successfully refreshed from Google Patents.
US3647579A
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Liquid phase double epitaxial process for manufacturing light emitting gallium phosphide devices
Assignee: RCA Corp
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Filing: 1968-03-28
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Granted: 1972-03-07
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Expires: 1988-03-28
Abstract
Abstract GALLIUM PHOSPHIDE LIGHT EMITTING DIODES WITH REPRODUCIBLE EXTERNAL QUANTUM EFFICIENCIES GREATER THAN 1% ARE MANLUFACTURED BY SUCCESSIVE LIQUID PHASE EPITAXIAL GROWTH OF N TYPE AND P TYPE LAYERS ON A GALLIUM PHOSHIDE SUBSTRATE WHICH MAY BE OF EITHER CONDUCTIVITY TYPE. THE N TYPE LAYER IS GROWTH FIRST FROM A MELT OF TELLURIUM AND GALLIUM PHOSPHIDE IN A GALLIUM SOLVENT. THE P TYPE LAYER IS SUBSEQUENTLY GROWN ON THE N TYPE LAYER FROM A MELT OF ZINC OXIDE, GALLIUM OXIDE AND GALLIUM PHOSPHIDE IN A GALLIUM SOLVENT.
Inventors
- 👤 Ivan Ladany
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 21:06
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/01; H10H20/011; H10H20/013; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/263; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2909; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H10P14/3446; H10W; H10W72/00; H10W72/01; H10W72/015; H10W72/01515; H10W72/071; H10W72/075; H10W72/851; H10W72/874; H10W72/884; Y; Y10; Y10S; Y10S148/00; Y10S148/107; Y10S148/119; Y10S148/135
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-03-07 | 1975-09-06 | 1976-03-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-03-07 | 1979-09-06 | 1980-03-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-03-07 | 1983-09-06 | 1984-03-07 | $7700.00 | Window Closed / Lapsed |