Method for fitting semiconductor pellet on metal body

Claim 1

A method according to claim 1, further comprising the step of forming a plating layer preliminarily on the surface of said metal member, said metal contact plate being disposed on the plating layer and alloyed through the plating layer to the metal member.

Claim 3

A method for manufacturing a semiconductor device comprising the steps of: disposing a gold-antimony alloy foil having two opposing principal surfaces on the surface of a metal electrode consisting essentially of a material selected from the group essentially consisting of nickel and a nickel-iron alloy; alloying by electric resistance welding one principal surface of said foil facing the surface of said Electrode with said electrode, the other principal surface of said foil being not alloyed therewith; and alloying an N-type silicon pellet with the unalloyed portion of the foil at a temperature lower than the eutectic temperature of the alloy of said foil and said electrode.

Claim 5

A method for manufacturing a semiconductor device comprising the steps of disposing a metal contact foil having first and second plane surfaces on a plane surface of a metal member so that the first surface of said contact foil faces and contacts the plane surface of said metal member, the contact foil having a region consisting mainly of gold at least at the second plane surface thereof; applying across the interface of the contact foil and the metal member such pressure and electric power as to form an alloy of the contact foil and the metal member therebetween with at least a portion of said region of the contact foil remaining unalloyed with the metal material of said metal member; and alloying a semiconductor pellet with the unalloyed portion of said region consisting mainly of gold at the second plane surface of said metal contact foil at a temperature lower than the eutectic temperature of the alloy of said contact foil and said metal member.

Claim 6

A method for manufacturing a semiconductor device comprising the steps of disposing a metal contact foil consisting essentially of gold and having first and second plane surfaces on a plane surface of a metal member consisting essentially of one member selected from the group consisting of nickel and a nickel-iron alloy so that the first surface of said contact foil faces and contacts the plane surface of said metal member; applying across the interface of the contact foil and the metal member pressure and electric power to form an alloy of the contact foil and the metal member therebetween with said second surface of said contact foil remaining substantially unalloyed with the metal member; and alloying a semiconductor pellet consisting essentially of silicon with the second plane surface of said metal contact foil at a temperature lower than the eutectic temperature of the alloy of said contact foil and said metal member.

Claim 7

A method for manufacturing a semiconductor device comprising the steps of plating a thin metal layer on a plane surface of a metal member; disposing a metal foil having first and second plane surfaces on the thin metal layer formed on the plane surface of said metal member so that the first of said foil contacts the thin metal layer, the metal foil having a region consisting mainly of gold at least at the second plane surface thereof; applying across the thin metal layer between the foil and metal member electric power to form an alloy of the foil and the metal member through the thin metal layer with at least a portion of said region of the metal foil remaining substantially unalloyed with metal materials of said metal member and said thin metal layer; and alloying a semiconductor pellet with the unalloyed portion of the region consisting mainly of gold at the second plane surface of said metal foil at a temperature lower than the eutectic temperature of the alloy formed between said foil and said metal member.

Claim 8

A method of manufacturing a semiconductor device which comprises: disposing a metal contact plate having first and second principal surfaces on the surface of a metal member so that said first principal surface faces the surface of said metal member, the contact plate having a region consisting mainly of gold at least at the second surface thereof; heating the metal member and the metal contact plate at such temperature and for such a period of time only as to form a first alloy between the metal contact plate and the metal member while at least a portion of said region of the contact plate remains substantially unalloyed with said metal member; disposing a semiconductor pellet on the unalloyed portion of the region consisting mainly of gold at the second principal surface of the metal contact plate; heating the semiconductor pellet and the unalloyed portion of the region consisting mainly of gold at the second principal surface of the metal contact plate at a temperature lower than the solidus or eutectic temperature of the first alloy to form a second alloy between the contact plate and the semiconductor pellet.

Claim 10

A method for connecting a semiconductor pellet to a metal member comprising the steps of: disposing a metal contact plate consisting mainly of gold having a first and second principal surfaces on the surface of a metal member consisting essentially of a material selected from the group essentially consisting of nickel and nickel-iron alloy such that said first principal surface of the contact plate faces the surface of said metal member; alloying at least a portion of said first principal surface of said metal contact plate with said metal member such that at least a portion of said second principal surface of the contact plate is left unalloyed with the material of said metal member; and alloying by heating a semiconductor pellet with the unalloyed portion of said second principal surface of said contact plate at a temperature lower than the eutectic temperature of said contact plate and said metal member.

Claim 11

A method of manufacturing a semiconductor device which comprises: disposing a metal contact foil consisting essentially of gold and having first and second principal surfaces on the surface of a metal member consisting essentially of a material selected from the group essentially consisting of nickel and a nickel-iron alloy so that said first principal surface faces the surface of said metal member; heating the metal member and the metal contact foil to form a first alloy between the metal contact foil and the metal member for a period of time in which at least a portion of the second principal surface of the contact foil remains unalloyed; disposing a semiconductor pellet consisting essentially of silicon on the second principal surface of the metal contact foil; and heating the semiconductor pellet and the second principal surface of the metal contact foil at a temperature lower than the eutectic temperature of the first alloy to form a second alloy between the contact foil and the semiconductor pellet.