Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
187 words
Thyristor circuit comprising a first thyristor with first and second emitter layers of opposite conductivity and two base layers of opposite conductivity arranged between the emitter layers, the first emitter layer comprising first and second separate parts, the first of these parts being provided with a connection for the load current of the thyristor, in which means is provided to impress upon the second part only of the first emitter layer a rapidly rising voltage, said means including an auxiliary thyristor connected between said second part of the first emitter layer and the load current connection of the first part of the first emitter layer and in which the breakover voltage in the forward direction of the series connection of the auxiliary thyristor and the partial thyristor composed of the second part of the first emitter layer and the other layers of the first thyristor is lower than the breakover voltage for the rest of said first thyristor, the base layer adjacent to said first emitter layer being thinner under said second part of the first emitter layer than under the first part of the emitter layer.
Claim 2
Dependent Claim
187 words
Thyristor circuit comprising a first thyristor with first and second emitter layers of opposite conductivity and two base layers of opposite conductivity arranged between the emitter layers, the first emitter layer comprising first and second separate parts, the first of these parts being provided with a connection for the load current of the thyristor, in which means is provided to impress upon the second part only of the first emitter layer a rapidly rising voltage, said means including an auxiliary thyristor connected between said second part of the first emitter layer and the load current connection of the first part of the first emitter layer and in which the breakover voltage in the forward direction of the series connection of the auxiliary thyristor and the partial thyristor composed of the second part of the first emitter layer and the other layers of the first thyristor is lower than the breakover voltage for the rest of said first thyristor, the base layer adjacent to said first emitter layer being thinner under said second part of the first emitter layer than under the first part of the emitter layer.
Claim 3
Dependent Claim
24 words
Thyristor circuit according to claim 1, in which an impedance element to limit the current through the auxiliary thyristor is connected in series therewith.
Claim 4
Dependent Claim
34 words
Thyristor circuit according to claim 1, in which the life of the minority charge carrier in at least one of the base layers is higher in said partial thyristor than in any other part.
Claim 5
Dependent Claim
27 words
Thyristor circuit according to claim 3, in which said first thyristor has a higher concentration of a heavy metal reducing the carrier lifetime than said partial thyristor.
Claim 6
Dependent Claim
15 words
Thyristor circuit according to claim 1, in which said auxiliary thyristor is a PNPN diode.
Claim 7
Dependent Claim
16 words
Thyristor circuit according to claim 1, in which said auxiliary thyristor is an optically controlled thyristor.
Claim 8
Dependent Claim
48 words
Thyristor circuit according to claim 1, in which a first bias voltage source is connected in series with said second thyristor and has such polarity that the junction between the second part of said first emitter layer and the adjacent base layer is biased in the forward direction.
Claim 9
Dependent Claim
34 words
Thyristor circuit according to claim 7, in which a second bias voltage source is connected between at least one of the two parts of said first emitter layer and the base layer adjacent thereto.