Relaxation oscillator semiconductor solid circuit structure

Claim 1

A RELAXATION OSCILLATOR SEMICONDUCTOR SOLID CIRCUIT STRUCTURE COMPRISING A SUBSTANTIALLY SINGLE CRYSTALLINE BASE LAYER OF SEMICONDUCTOR MATERIAL; FOUR LAYERS OF SEMICONDUCTOR MATERIAL OF ALTERNATING CONDUCTIVITY TYPE INTEGRALLY FORMED ON AND CRYSTALLOGRAPHICALLY AFFIXED TO SAID BASE LAYER, SAID FOUR LAYERS BEING DIVIDED BY A GAP FORMED THEREIN TRANSVERSE TO SAID BASE LAYER AND TO SAID FOUR LAYERS INTO TWO SECTIONS IN A MANNER WHEREBY ONE OF SAID TWO SECTIONS FORMS A PNPN SWITCH; A PLURALITY OF ADDITIONAL LAYERS OF SEMICONDUCTOR MATERIAL OF ALTERNATING CONDUCTIVITY TYPE INTEGRALLY FORMED ON AND CRYSTALLOGRAPHICALLY AFFIXED TO THE OTHER OF SAID TWO SECTIONS, THREE OF SAID PLURALITY OF ADDITIONAL LAYERS FORMING A FIRST ADDITIONAL SECTION FORMING A DIODE AND TWO OF SAID PLURALITY OF ADDITIONAL LAYERS FORMING A SECOND ADDITIONAL SECTION FORMING A DIODE, SAID FIRST AND SECOND ADDITIONAL SECTIONS HAVING ONE OF SAID PLURALITY OF ADDITIONAL LAYER IN COMMON AND BEING SPACED FROM EACH OTHER IN THEIR REMAINING ADDITIONAL LAYERS, SAID BASE LAYER PROVIDING A COMMON RESISTANCE CONTACT ONLY BETWEEN SAID SWITCH AND SAID DIODES AND THE COMMON LAYER OF SAID DIODES PROVIDING A COMMON CONNECTION FOR SAID DIODES; ELECTRICAL BIASING MEANS ELECTRICALLY CONNECTED TO ONE OF SAID DIODES ELECTRICALLY BIASING SAID ONE OF SAID DIODES AS A CAPACITOR; ELECTRICAL BIASING MEANS ELECTRICALLY CONNECTED TO THE OTHER OF SAID DIODES ELECTRICALLY BIASING SAID OTHER OF SAID DIODES AS A RESISTOR; AND MEANS ELECTRICALLY INTERCONNECTING SAID SWITCH AND SAID DIODES.