Patent US3638085A successfully refreshed from Google Patents.
US3638085A
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US
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Thin film capacitor and method of making same
Assignee: Sprague Electric Co
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Filing: 1970-11-13
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Granted: 1972-01-25
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Expires: 1990-11-13
Abstract
Abstract A thin film capacitor having a counterelectrode of chromium overlaid by gold that completely buries the dielectric layer and protects same from any atmospheric or environmental contamination.
Inventors
- 👤 Melvin Tierman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:11
CPC Classifications
H; H01; H01G; H01G4/00; H01G4/002; H01G4/005; H01G4/008; Y; Y10; Y10T; Y10T29/00; Y10T29/43; Y10T29/435
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
11 words
The capacitor of claim 1 wherein the conductive substrate is silicon.
Claim 2
Dependent Claim
18 words
The capacitor of claim 2 having a metal contact attached to an exposed surface of the silicon substrate.
Claim 3
Dependent Claim
11 words
The capacitor of claim 1 wherein the valve metal is tantalum.
Claim 4
Dependent Claim
11 words
The capacitor of claim 1 wherein the valve metal is aluminum.
Claim 5
Dependent Claim
26 words
The capacitor of claim 1 wherein said counterelectrode is a thin film of chromium covered by a thin film of gold that is plated with gold.
Claim 6
Dependent Claim
13 words
The capacitor of claim 1 having a beam lead extending from said counterelectrode.
Claim 7
Dependent Claim
26 words
The capacitor of claim 1 wherein said counterelectrode is a film of a nickel-chromium alloy covered by a layer of gold which is plated with gold.
Claim 8
Dependent Claim
42 words
The capacitor of claim 1 wherein said substrate is silicon, said dielectric compound is silicon dioxide, said valve metal is tantalum, said dielectric layer is tantalum pentoxide, and said counterelectrode is a chromium film covered by a gold film plated with gold.
Claim 9
Independent Claim
73 words
A method of fabricating a thin film capacitor including the steps of: providing a conductive silicon substrate with a configuration of in situ formed oxide around the top thereof; applying a thin film of a valve metal onto at least the entire substrate surface within said configuration; forming a layer of the oxide of said valve metal on the exposed surface of said valve metal film; and burying said layer under a counterelectrode.
Claim 10
Dependent Claim
31 words
The method of claim 10 in which the substrate is relatively thick and after the fabricating is reduced in thickness to form a sheet not more than about 2 mils thick.
Claim 11
Dependent Claim
16 words
The method of claim 10 having a metal contact attached to a surface of said substrate.
Claim 12
Dependent Claim
21 words
The method of claim 10 wherein the substrate is subdivided into individual pieces, each comprising at least one of said configurations.
Claim 13
Dependent Claim
25 words
The method of claim 13 wherein the subdividing is effected in a manner that leaves a beam lead projecting from the counterelectrode of a piece.
References Cited (Backward Citations)
US3257592A
Cited
US3403439A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-01-24 | 1975-07-26 | 1976-01-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-01-24 | 1979-07-26 | 1980-01-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-01-24 | 1983-07-26 | 1984-01-25 | $7700.00 | Window Closed / Lapsed |