Abstract Described is a method of producing a diffusion transistor of silicon wherein both the base region and the emitter region are produced by employing an SiO2 mask, by indiffusing an activator material obtained from the gaseous phase. Following the indiffusion of the base-coating activator obtained as an oxide from a gaseous phase, upon the already present SiO2 masking, and of the oxide which newly coats the diffusion point, additional SiO2 is precipitated from a reaction gas. The emitter region is produced by using the reinforced oxide layer as a mask, by diffusion and/or alloying. The above steps are undertaken, including the final contacting process, at a temperature which does not result in a notable penetration of doping material from the base region into the above-located oxide.
The method of claim 1, wherein the mask which coats the base region and which helps to diffuse the activator is comprised of thermally produced oxide.
Claim 2
Dependent Claim
55 words
The method of claim 1, wherein following the production of the emitter region for the purpose of exposing the contact point of the emitter, the disc-shaped semiconductor bodies are subjected to an etching process for exactly the period which it takes to expose the semiconductor surface at the emitter so that terminals may be contacted.
Claim 3
Dependent Claim
40 words
The method of claim 3, wherein a local etching treatment with the use of an etching mask, comprised particularly of photovarnish, is effected at least for the purpose of producing the terminal contacts for the collector and the base region.
Claim 4
Dependent Claim
38 words
The method of claim 1, wherein the reinforcement of the SiO2 mask is effected below 900* C., from a reaction gas comprising silane, or an orthosilicic acid ester such as tetraethoxysilane with oxidizing components, particularly oxygen or steam.