US3634045A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Growing of crystals using electron beam heating and annealize
Assignee: United Kingdom Atomic Energy Authority
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Filing: 1968-04-10
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Granted: 1972-01-11
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Expires: 1988-04-10
Abstract
Abstract A method and apparatus for growing a crystal. The method comprising, positioning the crystal and providing material similar to the material of said crystal in a region of intense electron heating whereby said material and a part of said crystal is melted and fuses together, withdrawing the crystal from the region of intense electron heating so as to promote solidification and growth of the crystal, and passing said crystal through a region of less intense electron heating to anneal said crystal.
Inventors
- 👤 Ronald Arthur Dugdale
- 👤 Stanley Denis Ford
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 18:53
CPC Classifications
C; C30; C30B; C30B11/00; C30B11/04; C30B11/08; C30B11/10; C30B15/00; C30B15/14; C30B15/16; Y; Y10; Y10S; Y10S117/00; Y10S117/905; Y10T; Y10T117/00; Y10T117/10; Y10T117/1016; Y10T117/1024; Y10T117/1032; Y10T117/1068
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
43 words
An apparatus according to claim 1 wherein said first cathode is in the shape of a segment of a hollow sphere, the first zone of electron beam hearing being at the center of the sphere of which the first cathode forms a part.
Claim 2
Dependent Claim
31 words
An apparatus according to claim 1 wherein the said second cathode is a hollow, right-circular, frustoconical shape, the second zone of electron beam heating being around the axis of the cone.
Claim 3
Independent Claim
130 words
A method of growing a crystal comprising, the steps of positioning a seed crystal in a first region of electron heating which is sufficiently intense to melt a part of the seed crystal, contacting the seed crystal with a feedstock material similar to the material of the seed crystal while holding the seed crystal in the first region of electron beam heating to cause the feedstock material to melt and fuse with the molten part of the seed crystal, withdrawing the seed crystal from the first region of electron beam heating so as to promote solidification and growth of the crystal, and passing the solidified crystal through a second region of electron beam heating which is sufficiently intense to anneal the crystal but not intense enough to melt the crystal.
Claim 4
Independent Claim
109 words
A method of growing a crystal comprising positioning a feedstock material similar to the material of said crystal in a first region of electron beam heating to form a pool of molten material, bringing a seed crystal into contact with the molten material in the first region of electron heating to melt a part of the seed crystal and fuse the seed crystal and the molten feedstock material, withdrawing the crystal from said molten feedstock Material to promote solidification and crystal growth, and passing the crystal through a second region of electron heating which is sufficiently intense to anneal the crystal but not intense enough to melt the crystal.
References Cited (Backward Citations)
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US3131051A
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US3267529A
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US3377419A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-01-10 | 1975-07-12 | 1976-01-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-01-10 | 1979-07-12 | 1980-01-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-01-10 | 1983-07-12 | 1984-01-11 | $7700.00 | Window Closed / Lapsed |