US2999737A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Production of highly pure single crystal semiconductor rods
Assignee: Siemens and Halske AG
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Filing: 1959-04-16
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Granted: 1961-09-12
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Expires: 1979-04-16
Abstract
No abstract record available.
Inventors
- 👤 Siebertz Karl
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 16:29
CPC Classifications
C; C01; C01B; C01B33/00; C01B33/02; B; B01; B01J; B01J19/00; B01J19/08; B01J19/087; B01J19/088; C01B19/00; C01B19/007; C01B21/00; C01B21/06; C01B21/064; C01B21/072; C01B25/00; C01B25/06; C01B35/00; C01B35/02; C01B35/04; C22; C22B; C22B41/00; C22B5/00; C22B5/02; C22B5/16; C22C; C22C1/00; C22C1/007; C23; C23C; C23C16/00; C23C16/003; C30; C30B; C30B11/00; C30B11/04; C30B11/08; C30B11/12; C30B15/00; C30B15/02; H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32018; H10; H10P; H10P95/00; Y; Y10; Y10S; Y10S117/00; Y10S117/901; Y10S117/917
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
213 words
THE METHOD OF CONTINUOUSLY GROWING IN A CONTINUOUS OPERATION A HIGHLY PURE RELATIVELY THIN SINGLE CRYSTAL RODLIKE SEMICONDUCTOR BODY FROM A MELT OF SAID SEMICONDUCTOR MATERIAL, COMPRISING PRODUCING WITHIN A REACTION VESSEL BETWEEN ONE END OF A MAIN ELECTRODE CONSISTING OF SAID SEMICONDUCTOR MATERIAL AND AT LEAST ONE COUNTER ELECTRODE A GLOW-ARC DISCHARGE TO FORM SAID MELT AT SAID ONE END OF SAID MAIN ELECTRODE IN THE FORM OF A SUBSTANTIALLY DROP-SHAPED MOLTEN ZONE, SAID ELECTRODES BEING DISPOSED TO PRODUCE SUBSTANTIALLY UNIFORM HEATING OF SUCH MOLTEN ZONE BY SAID GLOW-ARC DISCHARGE, DIPPING INTO SAID MELT AND END OF A RELATIVELY THIN SEED MEMBER CONSISTING OF SAID SEMICONDUCTOR MATERIAL AND HAVING A CROSS-SECTIONAL AREA WHICH IS SMALL AS COMPARED WITH THE SURFACE AREA OF SAID DROP-SHAPED MELT, DIRECTING ONTO SAID DROPSHAPED MELT A HIGHLY PURE GASEOUS COMPOUND OF SAID SEMICONDUCTOR MATERIAL TO CONTINUOUSLY SUPPLY THE MELT THEREWITH, SAID GASEOUS COMPOUND DECOMPOSING THERMALLY BY THE ACTION OF SAID GLOW-ARC DISCHARGE TO EFFECT CONTINUOUS DEPOSIT OF SAID SEMICONDUCTOR MATERIAL UPON SAID DROP-SHAPED MELT, AND CONTINUOUSLY WITHDRAWING SAID BODY FROM SAID DROP-SHAPED MELT TO CAUSE MOLTEN MATERIAL TO SOLIDIFY THEREON AT A RATE WHICH CORRESPONDS SUBSTANTIALLY TO THE RATE AT WHICH SAID SEMICONDUCTOR MATERIAL IS DEPOSITED ON SAID MELT BY THE THERMAL DECOMPOSITION OF SAID GASEOUS COMPOUND.
Claim 2
Independent Claim
213 words
THE METHOD OF CONTINUOUSLY GROWING IN A CONTINUOUS OPERATION A HIGHLY PURE RELATIVELY THIN SINGLE CRYSTAL RODLIKE SEMICONDUCTOR BODY FROM A MELT OF SAID SEMICONDUCTOR MATERIAL, COMPRISING PRODUCING WITHIN A REACTION VESSEL BETWEEN ONE END OF A MAIN ELECTRODE CONSISTING OF SAID SEMICONDUCTOR MATERIAL AND AT LEAST ONE COUNTER ELECTRODE A GLOW-ARC DISCHARGE TO FORM SAID MELT AT SAID ONE END OF SAID MAIN ELECTRODE IN THE FORM OF A SUBSTANTIALLY DROP-SHAPED MOLTEN ZONE, SAID ELECTRODES BEING DISPOSED TO PRODUCE SUBSTANTIALLY UNIFORM HEATING OF SUCH MOLTEN ZONE BY SAID GLOW-ARC DISCHARGE, DIPPING INTO SAID MELT AND END OF A RELATIVELY THIN SEED MEMBER CONSISTING OF SAID SEMICONDUCTOR MATERIAL AND HAVING A CROSS-SECTIONAL AREA WHICH IS SMALL AS COMPARED WITH THE SURFACE AREA OF SAID DROP-SHAPED MELT, DIRECTING ONTO SAID DROPSHAPED MELT A HIGHLY PURE GASEOUS COMPOUND OF SAID SEMICONDUCTOR MATERIAL TO CONTINUOUSLY SUPPLY THE MELT THEREWITH, SAID GASEOUS COMPOUND DECOMPOSING THERMALLY BY THE ACTION OF SAID GLOW-ARC DISCHARGE TO EFFECT CONTINUOUS DEPOSIT OF SAID SEMICONDUCTOR MATERIAL UPON SAID DROP-SHAPED MELT, AND CONTINUOUSLY WITHDRAWING SAID BODY FROM SAID DROP-SHAPED MELT TO CAUSE MOLTEN MATERIAL TO SOLIDIFY THEREON AT A RATE WHICH CORRESPONDS SUBSTANTIALLY TO THE RATE AT WHICH SAID SEMICONDUCTOR MATERIAL IS DEPOSITED ON SAID MELT BY THE THERMAL DECOMPOSITION OF SAID GASEOUS COMPOUND.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1964-09-11 | 1965-03-13 | 1965-09-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1968-09-11 | 1969-03-13 | 1969-09-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1972-09-11 | 1973-03-13 | 1973-09-12 | $7700.00 | Window Closed / Lapsed |