US3633269A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making contact to semiconductor devices
Assignee: Telefunken Electronic GmbH
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Filing: 1969-06-24
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Granted: 1972-01-11
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Expires: 1989-06-24
Abstract
Abstract The disclosure relates to a method of making contact with semiconductor devices by applying a metal layer, e.g. nickel or aluminum, onto an insulating layer, e.g. silicon dioxide, on the semiconductor material and onto the surface of the semiconductor material itself through windows in the insulating material and removing the part of the metal layer applied to the insulating layer by means of an adhesive strip, the metal layer having been treated, during or after its application, by heat to render it more firmly bonded to the semiconductor material than to the insulating layer.
Inventors
- 👤 Alfred Bachmeier
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 15:05
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/951
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
17 words
A method as defined in claim 1, wherein said metal layer is alloyed to the exposed regions.
Claim 2
Dependent Claim
17 words
A method as defined in claim 1, wherein said metal layer is sintered to said exposed regions.
Claim 3
Dependent Claim
13 words
A method as defined in claim 1, wherein said metal layer is vapor-deposited.
Claim 4
Dependent Claim
13 words
A method as defined in claim 1, wherein said metal layer is electrodeposited.
Claim 5
Dependent Claim
44 words
A method as defined in claim 1, wherein such materials are used for said insulating layer and said metal layer that said metal layer adheres, under heat treatment, better to said regions to which contact is to be made than to the insulating layer.
Claim 6
Dependent Claim
15 words
A method as defined in claim 6, wherein said insulating layer consists of silicon dioxide.
Claim 7
Dependent Claim
22 words
A method as defined in claim 7, wherein said metal layer is a layer of a metal selected from nickel or aluminum.
Claim 8
Dependent Claim
31 words
A method as defined in claim 8, wherein when nickel is used as the material for said metal layer, said heat treatment is effected at a temperature at about 650* C.
Claim 9
Dependent Claim
15 words
A method as claimed in claim 1, wherein said pulloff member is an adhesive tape.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-01-10 | 1975-07-12 | 1976-01-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-01-10 | 1979-07-12 | 1980-01-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-01-10 | 1983-07-12 | 1984-01-11 | $7700.00 | Window Closed / Lapsed |