US3341375A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fabrication technique
Assignee: International Business Machines Corp
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Filing: 1964-07-08
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Granted: 1967-09-12
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Expires: 1984-07-08
Abstract
No abstract record available.
Inventors
- 👤 Hochberg Frederick
- 👤 Reisman Arnold
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 15:06
CPC Classifications
H; H10; H10D; H10D99/00; H10D30/00; H10D30/01; H10D30/021; H10D30/60; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10P; H10P14/00; H10P14/60; H10P14/61; H10P32/00; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/053; Y10S148/085; Y10S148/106
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
115 words
A PROCESS FOR FABRICATING AN INSULATED GATE FIELD EFFECT TRANSISTOR COMPRISING THE STEPS OF: FORMING A SEMICONDUCTOR LAYER OF FIRST CONDUCTIVITY TYPE ONTO A SUBSTRATE; INTRODUCING A DOPANT MATERIAL THROUGH A CENTRAL PORTION OF SAID LAYER TO CONVERT SAID CENTRAL PORTION THROUGHOUT THE SECOND CONDUCTIVITY TYPE AND FORM P-N JUNCTIONS THEREBETWEEN AND THE REMAINING PORTIONS OF SAID LAYER, SAID CENTRAL PORTION OF SAID LAYER DEFINING A GATE REGION AND SAID REMAINING PORTIONS OF SAID LAYER DEFINING SOURCE AND DRAIN REGIONS, RESPECTIVELY; FORMING A THIN INSULATING LAYER AT LEAST OVER SAID CENTRAL PORTION OF SAID LAYER; AND DEPOSITING A THIN FILM METALLIC PATTERN OVER SAID INSULATING LAYER AND REGISTERED WITH SAID CENTRAL PORTION OF SAID LAYER.
Claim 2
Dependent Claim
115 words
A PROCESS FOR FABRICATING AN INSULATED GATE FIELD EFFECT TRANSISTOR COMPRISING THE STEPS OF: FORMING A SEMICONDUCTOR LAYER OF FIRST CONDUCTIVITY TYPE ONTO A SUBSTRATE; INTRODUCING A DOPANT MATERIAL THROUGH A CENTRAL PORTION OF SAID LAYER TO CONVERT SAID CENTRAL PORTION THROUGHOUT THE SECOND CONDUCTIVITY TYPE AND FORM P-N JUNCTIONS THEREBETWEEN AND THE REMAINING PORTIONS OF SAID LAYER, SAID CENTRAL PORTION OF SAID LAYER DEFINING A GATE REGION AND SAID REMAINING PORTIONS OF SAID LAYER DEFINING SOURCE AND DRAIN REGIONS, RESPECTIVELY; FORMING A THIN INSULATING LAYER AT LEAST OVER SAID CENTRAL PORTION OF SAID LAYER; AND DEPOSITING A THIN FILM METALLIC PATTERN OVER SAID INSULATING LAYER AND REGISTERED WITH SAID CENTRAL PORTION OF SAID LAYER.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-09-11 | 1971-03-13 | 1971-09-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-09-11 | 1975-03-13 | 1975-09-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-09-11 | 1979-03-13 | 1979-09-12 | $7700.00 | Window Closed / Lapsed |