Patent US3629017A successfully refreshed from Google Patents.
US3629017A
Expired / Lapsed
US
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Method of producing a semiconductor device
Assignee: Telefunken Electronic GmbH
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Filing: 1969-10-01
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Granted: 1971-12-21
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Expires: 1989-10-01
Abstract
Abstract A method of producing a semiconductor device, in which a region of a first conductivity type contains a plurality of regions of a second conductivity type, includes, after formation of the first conductivity type region, masking the semiconductor body to provide a plurality of uncovered areas and alloying into these areas a part of a foil placed on the semiconductor body by means of a specially controlled electron beam and leaving the nonalloyed part of the foil to provide electrical connection between the areas.
Inventors
- 👤 Fritz Stork
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 16:40
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10D; H10D99/00; H10P; H10P95/00; H10P95/90
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
51 words
A method as defined in claim 1, wherein said region of said first type of conductivity is a base region let into a semiconductor body of the type of conductivity of a collector region, and said plurality of regions of said second type of conductivity form a plurality of emitter regions.
Claim 2
Dependent Claim
26 words
A method as defined in claim 2, further comprising using as said foil an aluminum foil in the production of emitter regions for PNP-germanium planar transistors.
Claim 3
Dependent Claim
26 words
A method as defined in claim 2, further comprising using as said foil a gold-boron foil in the production of emitter regions for PNP-silicon planar transistors.
Claim 4
Dependent Claim
26 words
A method as defined in claim 2, further comprising using as said foil a gold-arsenic foil in the production of emitter regions for NPN-silicon planar transistors.
Claim 5
Dependent Claim
20 words
A method as defined in claim 2, wherein said foils have a thickness of from 25 to 50 Mu m.
Claim 6
Dependent Claim
30 words
A method as defined in claim 2, wherein said foil is adjusted to the structure of said surface of said semiconductor body and is helD on said surface in register.
Claim 7
Dependent Claim
28 words
A method as defined in claim 2, wherein the material for the insulating layer is selected from the group consisting of silicon oxide, silicon dioxide, and silicon nitride.
Claim 8
Dependent Claim
29 words
A method as defined in claim 1, further comprising controlling the cross section, intensity, interval rhythm and the displacement of said electron beam by means of a programmed computer.
Claim 9
Independent Claim
199 words
A method of producing a transistor having a multiple-emitter structure comprising the steps of forming an insulating layer on a surface of a semiconductor body of a first type of conductivity and forming the collector region, forming a base window in said insulating layer, vapor depositing on said surface of said semiconductor body a layer of a substance containing the base diffusion material, diffusing in a heat treatment said base diffusion material from said vapor-deposited layer into said semiconductor body through said base window to form a base region in said semiconductor body, removing said deposited layer, forming recesses in said base region which extend short of the base to collector junction by means of an electron beam, masking said surface of said semiconductor body with an insulating layer so as to leave said recesses uncovered, placing a foil of an emitter-alloying material over that part of said masking insulating layer which lies over the base region and over said recesses, and alloying portions of said foil into said recesses by means of a controlled electron beam forming base-to-emitter barrier layers and leaving said foil which is not alloyed into said recesses to provide electrical connection between said recesses.
References Cited (Backward Citations)
US3537920A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-12-20 | 1975-06-21 | 1975-12-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-12-20 | 1979-06-21 | 1979-12-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-12-20 | 1983-06-21 | 1983-12-21 | $7700.00 | Window Closed / Lapsed |