Patent US3626334A successfully refreshed from Google Patents.
US3626334A
Expired / Lapsed
US
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Electrically variable acoustic delay line
Assignee: International Business Machines Corp
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Filing: 1969-12-30
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Granted: 1971-12-07
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Expires: 1989-12-30
Abstract
Abstract This invention relates to acoustic wave delay lines and, more particularly, to surface acoustic wave delay lines in nonpiezoelectric semiconductors in which the delay can be varied by application of an electrical signal.
Inventors
- 👤 Robert W Keyes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 17:18
CPC Classifications
H; H03; H03K; H03K19/00; H03K19/02; H03K19/14; H03H; H03H9/00; H03H9/02; H03H9/02535; H03H9/02543; H03H9/02566; H03H9/30; H03H9/42; H03H9/423; H10; H10N; H10N39/00
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
73 words
A variable delay line for acoustic surface waves comprising a nonpiezoelectric semiconductor, said semiconductor having a predetermined portion of one of its surfaces modified so as to cause a difference in elastic constant between said modified portion and the remaining portion of said semiconductor, means for sending acoustic surface waves along said modified surface, and means for altering the number of carriers in said predetermined portion so as to vary its elastic constant.
Claim 2
Dependent Claim
73 words
A variable delay line for acoustic surface waves comprising a nonpiezoelectric semiconductor, said semiconductor having a predetermined portion of one of its surfaces modified so as to cause a difference in elastic constant between said modified portion and the remaining portion of said semiconductor, means for sending acoustic surface waves along said modified surface, and means for altering the number of carriers in said predetermined portion so as to vary its elastic constant.
Claim 3
Dependent Claim
74 words
A variable delay line for acoustic surface waves comprising a nonpiezoelectric semiconductor doped to have a given conductivity, a portion of said semiconductor having one of its surfaces doped to produce an opposite conductivity region throughout said portion of the surface, means for sending acoustic surface waves along said doped surface, and means for altering the number of carriers in said doped surface so as to vary the elastic constant of said doped surface.
Claim 4
Dependent Claim
74 words
A variable delay line for acoustic surface waves comprising a nonpiezoelectric semiconductor doped to have a given conductivity, a portion of said semiconductor having one of its surfaces doped to produce an opposite conductivity region throughout said portion of the surface, means for sending acoustic surface waves along said doped surface, and means for altering the number of carriers in said doped surface so as to vary the elastic constant of said doped surface.
Claim 5
Dependent Claim
76 words
A variable delay line for acoustic surface waves comprising a nonpiezoelectric semiconductor, a metal film contacting a surface of said semiconductor to provide a preferential path for said acoustic surface waves, means for sending acoustic surface waves along said preferential path, and means for altering the number of carriers in said semiconductor via said metal film so as to vary the elastic constant of said semiconductor and thus vary the velocity of said surface acoustic waves.
Claim 6
Dependent Claim
76 words
A variable delay line for acoustic surface waves comprising a nonpiezoelectric semiconductor, a metal film contacting a surface of said semiconductor to provide a preferential path for said acoustic surface waves, means for sending acoustic surface waves along said preferential path, and means for altering the number of carriers in said semiconductor via said metal film so as to vary the elastic constant of said semiconductor and thus vary the velocity of said surface acoustic waves.
Claim 7
Dependent Claim
87 words
A variable delay line for acoustic surface waves comprising a multivalley-type nonpiezoelectric semiconductor or one having a degenerate band structure, said semiconductor having a predetermined portion of one of its surfaces modified so as to form a junction whereby a difference in elastic constant is created between said modified portion and the remaining portion of said semiconductor, means for sending surface acoustic waves along said junction, and means for changing the concentration of electrons in said junction during the passage of said acoustic waves along said junction.
Claim 8
Dependent Claim
87 words
A variable delay line for acoustic surface waves comprising a multivalley-type nonpiezoelectric semiconductor or one having a degenerate band structure, said semiconductor having a predetermined portion of one of its surfaces modified so as to form a junction whereby a difference in elastic constant is created between said modified portion and the remaining portion of said semiconductor, means for sending surface acoustic waves along said junction, and means for changing the concentration of electrons in said junction during the passage of said acoustic waves along said junction.
Claim 9
Dependent Claim
12 words
The variable delay line of claim 3 wherein said semiconductor is silicon.
Claim 10
Dependent Claim
12 words
The variable delay line of claim 3 wherein said semiconductor is germanium.
Claim 11
Dependent Claim
101 words
A variable delay line comprising a multivalley-type nonpiezoelectric semiconductor or one having a degenerate band structure, said semiconductor having a predetermined portion of one of its surfaces doped so as to cause a junction to form whereby a difference in elastic constant is created between said doped portIon and semiconductor, a metal strip contacting said doped portion along the length of said junction, means for sending acoustic waves along said junction, means for sending acoustic waves along said junction, and means for applying an electrical potential to said metal strip so as to change the concentration of electrons in said junction.
Claim 12
Dependent Claim
101 words
A variable delay line comprising a multivalley-type nonpiezoelectric semiconductor or one having a degenerate band structure, said semiconductor having a predetermined portion of one of its surfaces doped so as to cause a junction to form whereby a difference in elastic constant is created between said doped portIon and semiconductor, a metal strip contacting said doped portion along the length of said junction, means for sending acoustic waves along said junction, means for sending acoustic waves along said junction, and means for applying an electrical potential to said metal strip so as to change the concentration of electrons in said junction.
Claim 13
Dependent Claim
70 words
A variable delay line comprising a body of P-type silicon, an insulating layer on said body of silicon, a metal electrode deposited on and along said insulating layer, means for sending surface acoustic waves along the junction region formed between insulator and silicon, and electrical potential means applied to said metal for changing the electron concentration in the junction region so as to alter the velocity of said surface waves.
Claim 14
Dependent Claim
70 words
A variable delay line comprising a body of P-type silicon, an insulating layer on said body of silicon, a metal electrode deposited on and along said insulating layer, means for sending surface acoustic waves along the junction region formed between insulator and silicon, and electrical potential means applied to said metal for changing the electron concentration in the junction region so as to alter the velocity of said surface waves.
Claim 15
Dependent Claim
73 words
A variable delay line for acoustic surface waves comprising a body of doped silicon of one conductivity type, said body being doped with an opposite conductivity type throughout a selected portion of one surface of said body so as to provide a PN-junction, means for sending surface acoustic waves along said junction, and means for changing the concentration of electrons in said junction during the passage of said acoustic waves along said junction.
Claim 16
Dependent Claim
73 words
A variable delay line for acoustic surface waves comprising a body of doped silicon of one conductivity type, said body being doped with an opposite conductivity type throughout a selected portion of one surface of said body so as to provide a PN-junction, means for sending surface acoustic waves along said junction, and means for changing the concentration of electrons in said junction during the passage of said acoustic waves along said junction.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-12-06 | 1975-06-07 | 1975-12-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-12-06 | 1979-06-07 | 1979-12-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-12-06 | 1983-06-07 | 1983-12-07 | $7700.00 | Window Closed / Lapsed |