Patent US3624315A successfully refreshed from Google Patents.
US3624315A
Expired / Lapsed
US
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Transducer apparatus and transducer amplifier system utilizing insulated gate semiconductor field effect devices
Assignee: Individual
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Filing: 1969-07-15
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Granted: 1971-11-30
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Expires: 1989-07-15
Abstract
Abstract A transducer apparatus wherein the source to drain conductance of an insulated gate semiconductor field effect device is modulated by the application of mechanical stress to the channel layer of the device. Specific transducer modifications include microphone pickups and phonopickups. The pickup may include preamplifiers in either discrete or integrated circuit form.
Inventors
- 👤 Max E Broce
- 👤 Derek Colman
- 👤 Jack P Mize
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 17:53
CPC Classifications
H; H04; H04R; H04R23/00; H04R23/006; H03; H03F; H03F3/00; H03F3/181; H03F3/183; H03F3/185; H03F3/1855; H10; H10D; H10D30/00; H10D30/60; H10D30/791; H10D30/798; H10D99/00; H10N; H10N39/00; H04R25/00
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
216 words
An integrated circuit transducer-amplifier system, comprising in combination: a. a support member; b. a flexible support substrate having one of its ends connected to said support member and its other end free to move with respect to said one end, said support substrate having a piezoresistive semiconductor region formed on one surface intermediate the ends thereof; c. an insulated gate piezoresistive semiconductor field effect device formed in said semiconductor region, said insulated gate device being coupled between a voltage source and a reference potential for providing a predetermined voltage differential between its source and drain electrodes to produce a preselected source-drain conductance of said insulated gate device; d. a plurality of metal insulator semiconductor field effect devices formed in said semiconductor region, said metal insulator devices being series connected between said voltage source and said reference potential, with the gate of one of said metal insulator devices being coupled to the output of said insulated gate device, and with the output of said one metal insulator device being coupled to the output of said transducer-amplifier; and e. mechanical means connected to said support substrate for imparting a uniaxial stress upon said support substrate so as to produce a corresponding stress upon said semiconductor region and thereby proportionally modulating the source-drain conductance of said insulated gate device.
Claim 2
Dependent Claim
216 words
An integrated circuit transducer-amplifier system, comprising in combination: a. a support member; b. a flexible support substrate having one of its ends connected to said support member and its other end free to move with respect to said one end, said support substrate having a piezoresistive semiconductor region formed on one surface intermediate the ends thereof; c. an insulated gate piezoresistive semiconductor field effect device formed in said semiconductor region, said insulated gate device being coupled between a voltage source and a reference potential for providing a predetermined voltage differential between its source and drain electrodes to produce a preselected source-drain conductance of said insulated gate device; d. a plurality of metal insulator semiconductor field effect devices formed in said semiconductor region, said metal insulator devices being series connected between said voltage source and said reference potential, with the gate of one of said metal insulator devices being coupled to the output of said insulated gate device, and with the output of said one metal insulator device being coupled to the output of said transducer-amplifier; and e. mechanical means connected to said support substrate for imparting a uniaxial stress upon said support substrate so as to produce a corresponding stress upon said semiconductor region and thereby proportionally modulating the source-drain conductance of said insulated gate device.
Claim 3
Dependent Claim
42 words
The integrated circuit transducer-amplifier system of claim 1 wherein said piezoresistive semicondUctor region is a layer of semiconductor material substantially overlying and secured to one major surface of said support substrate, and wherein said support substrate is made of an insulating material.
Claim 4
Dependent Claim
44 words
The integrated circuit transducer-amplifier system of claim 1 wherein the drain of said insulated gate device is coupled to said voltage source by a metal insulator semiconductor field effect device, and the source of said insulated gate device is coupled to said reference potential.
Claim 5
Dependent Claim
33 words
The integrated circuit transducer-amplifier system of claim 1 wherein the junction of two of said metal insulator devices are coupled to the gate of said insulated gate device for providing positive feedback thereto.
Claim 6
Dependent Claim
30 words
The integrated circuit transducer-amplifier system of claim 1 wherein the gate of said one metal insulator device is coupled to the drain of said insulated gate device by a capacitor.
Claim 7
Dependent Claim
65 words
The integrated circuit transducer-amplifier system of claim 1 and further including a pair of metal insulator semiconductor field effect devices formed in said semiconductor region and being series connected between said voltage source and said reference potential, and wherein the output of said one metal insulator device is coupled to the output of said transducer-amplifier system by one of said pair of metal insulator devices.
Claim 8
Dependent Claim
47 words
The integrated circuit transducer-amplifier system of claim 1 and further including a pair of back-to-back semiconductor diodes formed in said semiconductor region and being series connected between the output of said transducer-amplifier system and the source of said insulated gate device for providing a negative feedback thereto.
Claim 9
Dependent Claim
32 words
The integrated circuit transducer-amplifier system of claim 1 wherein said mechanical means is a diaphragm connected to said support substrate remote from said one end thereof, said diaphragm responds to air vibrations.
Claim 10
Dependent Claim
27 words
The integrated circuit transducer-amplifier system of claim 1 wherein said mechanical means is a phonograph needle connected to said support substrate remote from said one end thereof.
Claim 11
Dependent Claim
44 words
The integrated circuit transducer-amplifier system of claim 1 wherein said support substrate is T-shaped with the cap of the T being connected to said support member and the stem of the T being free to move with respect to said cap of the T.
Claim 12
Dependent Claim
61 words
The integrated circuit transducer-amplifier system of claim 10 wherein said semiconductor region substantially overlies and is secured to one major surface of said T-shaped support substrate, and wherein said insulated gate device is formed in the semiconductor region overlying said stem of the T and said metal insulating devices are formed in the semiconductor region overlying said cap of the T.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-11-29 | 1975-05-31 | 1975-11-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-11-29 | 1979-05-31 | 1979-11-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-11-29 | 1983-05-31 | 1983-11-30 | $7700.00 | Window Closed / Lapsed |