Patent US3623712A successfully refreshed from Google Patents.
US3623712A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Epitaxial radiation heated reactor and process
Assignee: Applied Materials Technology Ltd
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Filing: 1969-10-15
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Granted: 1971-11-30
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Expires: 1989-10-15
Abstract
Abstract Apparatus and process for vapor depositing epitaxial films on substrates. A gaseous reactant is introduced into a reaction chamber formed from a material, such as quartz, which is transparent and nonobstructive to radiant heat energy transmitted at a predetermined short wavelength. A graphite susceptor, which is opaque to and absorbs the radiant heat energy, is positioned within the reaction chamber and supports the substrates to be coated. The susceptor is heated while the walls of the reaction chamber remain cool to preclude deposition of epitaxial film on the walls. To insure uniform heating of the susceptor, the same may be moved relative to the radiant heat source which, in the preferred embodiment, comprises a bank of tungsten filament quartz-iodine high intensity lamps.
Inventors
- 👤 Michael A Mcneilly
- 👤 Walter C Benzing
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 16:58
CPC Classifications
F; F27; F27B; F27B17/00; F27B17/02; Y; Y10; Y10S; Y10S148/00; Y10S148/006; Y10S148/071
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
200 words
A cool wall radiation heated reactor for effecting epitaxial and like chemical vapor deposition reactions therein on a heated substrate positioned therein and heated thereby, comprising A. a radiant heat source for producing and transmitting radiant heat energy of short wave length, B. means defining a reaction chamber, for receiving therein a substrate to be coated, positioned adjacent said heat source, 1. at least that portion of a wall of said reaction chamber which is positioned adjacent said heat source being formed from a material which is transparent to heat energy at the wave length produced by said heat source so that such heat energy is transmitted through said wall without absorption thereby, whereby said wall remains cool and substantially free of film deposits during operation of said reactor, and C. susceptor means to be heated by said heat source positioned within said reaction chamber for supporting said substrate thereon during operation of said reactor, 1. said susceptor means including a susceptor body formed from a material which is opaque to said heat energy and which absorbs the same and is heated thereby, 2. said susceptor body maintaining the temperature of said substrate substantially constant during operation of said reactor
Claim 2
Dependent Claim
200 words
A cool wall radiation heated reactor for effecting epitaxial and like chemical vapor deposition reactions therein on a heated substrate positioned therein and heated thereby, comprising A. a radiant heat source for producing and transmitting radiant heat energy of short wave length, B. means defining a reaction chamber, for receiving therein a substrate to be coated, positioned adjacent said heat source, 1. at least that portion of a wall of said reaction chamber which is positioned adjacent said heat source being formed from a material which is transparent to heat energy at the wave length produced by said heat source so that such heat energy is transmitted through said wall without absorption thereby, whereby said wall remains cool and substantially free of film deposits during operation of said reactor, and C. susceptor means to be heated by said heat source positioned within said reaction chamber for supporting said substrate thereon during operation of said reactor, 1. said susceptor means including a susceptor body formed from a material which is opaque to said heat energy and which absorbs the same and is heated thereby, 2. said susceptor body maintaining the temperature of said substrate substantially constant during operation of said reactor
Claim 3
Dependent Claim
16 words
said susceptor body maintaining the temperature of said substrate substantially constant during operation of said reactor
Claim 4
Dependent Claim
16 words
said susceptor body maintaining the temperature of said substrate substantially constant during operation of said reactor
Claim 5
Dependent Claim
20 words
The reactor of claim 1 in which all walls of said reaction chamber are formed from said heat transparent material.
Claim 6
Dependent Claim
31 words
The reactor of claim 1 in which said heat source comprises at least one high intensity lamp which radiates heat energy having a wave length of approximately 1 micron or below.
Claim 7
Dependent Claim
25 words
structure for moving said susceptor body relative to said heat source to insure substantially uniform heating of said susceptor body and the substrate supported thereby.
Claim 8
Dependent Claim
25 words
structure for moving said susceptor body relative to said heat source to insure substantially uniform heating of said susceptor body and the substrate supported thereby.
Claim 9
Dependent Claim
37 words
The reactor of claim 3 in which said reaction chamber comprises a quartz enclosure separating said heat source from said substrate, the walls of said enclosure being generally unobstructive of heat energy radiated at said wave length.
Claim 10
Dependent Claim
12 words
The reactor of claim 1 in which said susceptor means further includes
Claim 11
Dependent Claim
15 words
The reactor of claim 1, which further includes means for cooling said radiant heat source.
Claim 12
Dependent Claim
33 words
The reactor of claim 1 in which said radiant heat source comprises a high intensity tungsten filament quartz lamp which generates heat energy having a wave length of approximately one micron or below.
Claim 13
Dependent Claim
37 words
The reactor of claim 1 in which said radiant heat source comprises a bank of high intensity tungsten filament quartz lamps, each of which generates heat energy having a wave length of approximately one micron or below.
Claim 14
Dependent Claim
42 words
The reactor of claim 1 in which said susceptor means is separable from said reaction chamber so that said substrate may be positioned on said susceptor body outside said reaction chamber and thereafter introduced on said susceptor body into said reaction chamber.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-11-29 | 1975-05-31 | 1975-11-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-11-29 | 1979-05-31 | 1979-11-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-11-29 | 1983-05-31 | 1983-11-30 | $7700.00 | Window Closed / Lapsed |